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Manufacturing Bits: May 25


Higher voltage GaN Imec and Aixtron have demonstrated the ability to extend gallium-nitride (GaN) to new voltage levels in the power semiconductor market, enabling the technology to compete in much broader segments. Imec and Aixtron have demonstrated epitaxial growth of GaN buffer layers qualified for 1,200-volt applications on specialized 200mm substrates with a hard breakdown exceeding 1,... » read more

Manufacturing Bits: April 10


Higher power GaN Imec and Qromis have announced the development of a new gallium nitride (GaN) substrate technology that enables power devices at 650 volts and above. GaN is an emerging technology for power semiconductor applications. Based on a GaN-on-silicon technology, GaN-based power semis operate at 650 volts and above. In simple terms, the buffer layers between the GaN device and the ... » read more

Manufacturing Bits: Nov. 14


GaN for electric cars Leti is coordinating a new European project to improve the drivetrain in electric vehicles. The so-called ModulED project will focus on the development of gallium nitride (GaN) technology for electric vehicles. The goal is to use power-based GaN devices for the motor, enabling a change from direct current to alternating current. The three-year, €7.2 million proje... » read more