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NIST Modifies & Improves Technique For Detecting Transistor Defects


Abstract "We utilize a frequency-modulated charge pumping methodology to measure quickly and conveniently single “charge per cycle” in highly scaled Si/SiO2 metal–oxide–semiconductor field effect transistors. This is indicative of detection and manipulation of a single interface trap spin species located at the boundary between the SiO2 gate dielectric and Si substrate (almost certainl... » read more