Research Bits: December 11


Diamond device with high breakdown voltage Researchers from the University of Illinois at Urbana-Champaign developed diamond p-type lateral Schottky barrier diodes they say have the highest breakdown voltage and lowest leakage current compared to previous diamond devices. The diamond device can sustain high voltage, approximately 5 kV, although the voltage was limited by setup of measurement a... » read more

Week In Review, Manufacturing, Test


Samsung announced initial production of its 3nm process node, which uses a gate-all-around (nanosheet) transistor structure that the company calls Multi-Bridge-Channel FET (MBCFET). The first-generation 3nm process can reduce power consumption by up to 45% compared with a 5nm process, as well as improve performance by 23% and reduce area by 16%, according to the company. The second-generation 3... » read more