TFETs: Design and Operation, Including Material Selection and Simulation Methods


A new technical paper titled "Multiscale Simulation and Machine Learning Facilitated Design of Two-Dimensional Nanomaterials-Based Tunnel Field-Effect Transistors: A Review" was published by researchers at University of Chicago and Argonne National Lab. Abstract "Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transi... » read more

Power/Performance Bits: Dec. 8


Reducing transistor switching power One of the great challenges in electronics has been to reduce power consumption during transistor switching operation. However, engineers at University of California, Santa Barbara, and Rice University demonstrated a new transistor that switches at only 0.1 volts and reduces power dissipation by over 90% compared to state-of-the-art MOSFETs. "The steepn... » read more