Analysis Of The On-DRAM-Die Read Disturbance Mitigation Method: Per Row Activation Counting

A technical paper titled “Understanding the Security Benefits and Overheads of Emerging Industry Solutions to DRAM Read Disturbance” was published by researchers at ETH Zürich and TOBB University of Economics and Technology. Abstract: "We present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per... » read more