A technical paper titled "A Redox-Based Ion-Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses" was published by researchers at National Institute for Materials Science (NIMS) and Tokyo University of Science.
Abstract:
"Herein, physical reservoir computing with a redox-based ion-gating reservoir (redox-IGR) comprising LixWO3 thin film and lithium-ion co...
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