Resistive Switching Memory Based on Thin-Film Design of Amorphous Hafnium Oxide (Cambridge & Others)

A technical paper titled “Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity” was published by researchers at University of Cambridge, Linköping University, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo. Abstract: "A design concept of phase-separated amorphous nano... » read more

Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis

Abstract "Resistance switching in metal–insulator–metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility... » read more

Modeling electrical conduction in resistive-switching memory through machine learning

Published in AIP Advances on July 13, 2021. Read the full paper (open access). Abstract Traditional physical-based models have generally been used to model the resistive-switching behavior of resistive-switching memory (RSM). Recently, vacancy-based conduction-filament (CF) growth models have been used to model device characteristics of a wide range of RSM devices. However, few have focused o... » read more