Diamond Semiconductor: Highest Breakdown Voltage, Lowest Leakage Current


A technical paper titled "Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)" was published by researchers at University of Illinois at Urbana–Champaign. Abstract "Diamond p-type lateral Schottky barrier diodes (SBDs) with a 2- μm -thick drift layer are fabricated with and without Al2O3 field plates. Schottky contacts composed of Mo (50 nm) ... » read more

Lateral 3 kV AlN SBDs on Bulk AlN Substrates By MOCVD


A new technical paper titled "3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD" was published by researchers at Arizona State University. Abstract "This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying char... » read more