In this white paper, a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) power amplifier (PA) design approach is examined from a systems perspective. It highlights the design flow and its essential features for most PA design projects by illustrating a simple Class A GaAs pHEMT monolithic microwave IC (MMIC) PA design using Cadence AWR Microwave Office circuit desi...
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