The High NA EUV Imperative: How Computational Lithography Solutions Enable Us To Think Smaller

By Gandharv Bhatara - 21 Mar, 2024 - Comments: 0

The future of computing depends on miniaturization, and extreme ultraviolet lithography (EUV) is one key enabler. Until recently, we have relied on low numerical aperture (NA) EUV systems with an aperture of 0.33 to help us reduce the size of integrated circuits (ICs). As with deep ultraviolet (DUV) technology, this has begun to reach its limits. High NA EUV lithography with a 0.55 aperture rep... » read more

Business, Technology Challenges Increase For Photomasks

By Mark LaPedus - 16 Dec, 2021 - Comments: 0

Experts at the Table: Semiconductor Engineering sat down to discuss optical and EUV photomasks issues, as well as the challenges facing the mask business, with Naoya Hayashi, research fellow at DNP; Peter Buck, director of MPC & mask defect management at Siemens Digital Industries Software; Bryan Kasprowicz, senior director of technical strategy at Hoya; and Aki Fujimura, CEO of D2S. What f... » read more

Design Compliant Source Mask Optimization (SMO)

By PDF Solutions - 20 Sep, 2018 - Comments: 0

Source Mask Optimization (SMO) is required to extend the use of 193 water immersion lithography to the 22nm technology node. Although SMO is being aggressively pushed in volume production the layout design implications of this technology have not been openly discussed. In this paper, the impact of layout design style on simultaneous SMO of Logic and SRAM is studied. In particular the improvemen... » read more

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tag: source mask optimization

The High NA EUV Imperative: How Computational Lithography Solutions Enable Us To Think Smaller

Business, Technology Challenges Increase For Photomasks

Design Compliant Source Mask Optimization (SMO)

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