A Route For More Efficient SOT-MRAM Designs (NTU, TSMC)


A new technical paper titled "Efficient Magnetization Switching via Orbital-to-Spin Conversion in Cr/W-Based Heterostructures" by researchers at National Taiwan University and TSMC. Abstract "A highly efficient spin–orbit torque (SOT) switching mechanism is crucial for the realization of practical SOT magnetic random-access memory (MRAM). This study proposes a Cr/W-based spin current sour... » read more

Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures


Abstract: "The spin–orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the... » read more