CMP, ST et al offer 28nm FD-SOI for prototyping, research

By Various Writers - 06 Nov, 2011 - Comments: 0

Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~ ~ What would a port to 28nm FD-SOI do for your design? A recent announcement by CMP, STMicroelectronics and Soitec invites you to find out. Specifically, ST’s CMOS 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) process – which uses innovative silicon substrates from Soitec and incorporates robust, compact model... » read more

SOI Conference Shows SOI Driving Key Roadmaps

By Various Writers - 21 Oct, 2011 - Comments: 0

By Adele Hars The 2011 IEEE SOI Conference, held in Tempe, AZ last week was not one to miss…but I did. Happily, I got the papers right away, along with observations shared by some of the folks who did get there. Highlights include excellent and insightful papers from ST, ARM, IBM, Intel, Leti, Peregrine and GlobalFoundries, plus many more that indicate SOI-based technologies are at th... » read more

Smart Power on SOI

By Various Writers - 06 Jun, 2011 - Comments: 0

By Adele Hars What if you had to reduce power dissipation by 40x? That's exactly the task that fell to STMicroelectronics, under an EU program called Smart Power Management. At the recent ISPSD (International Symposium on Power Semiconductor Devices and ICs) conference, ST and partners (GE Vingmed Ultrasound and Sintef) presented a paper on how they did it, using ST's latest SOI-based ... » read more

MEMS on SOI – Growing Fast and Faster

By Various Writers - 11 Apr, 2011 - Comments: 0

By Adele Hars In the latest ASN posting by Dr. Eric Mounier of Yole Developpement, “SOI for MEMS: A Promising Material”, he notes that SOI MEMS is growing at a CAGR (2011-2015) of 15.6%, compared to 8.1% for bulk silicon-based solutions. MEMS designers are doing amazing things on SOI – which would explain that impressive growth rate. [caption id="attachment_12" align="aligncenter... » read more

Betting On 3D

By Ed Sperling - 26 Aug, 2010 - Comments: 0

The continuation of Moore’s Law appears less in doubt than ever. Companies such as Intel, ST, AMD (via GlobalFoundries) and IBM are testing FinFETS and ETSOI and work is being done on the back end to ensure that these new structures can be manufactured with sufficient yield. What’s changed, though, is the resistance by other companies to the progression of Moore’s Law. There is no long... » read more

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tag: ST

CMP, ST et al offer 28nm FD-SOI for prototyping, research

SOI Conference Shows SOI Driving Key Roadmaps

Smart Power on SOI

MEMS on SOI – Growing Fast and Faster

Betting On 3D