Higher power GaN
Imec and Qromis have announced the development of a new gallium nitride (GaN) substrate technology that enables power devices at 650 volts and above.
GaN is an emerging technology for power semiconductor applications. Based on a GaN-on-silicon technology, GaN-based power semis operate at 650 volts and above. In simple terms, the buffer layers between the GaN device and the ...
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