Characterization, Modeling, And Model Parameter Extraction Of 5nm FinFETs

A technical paper titled “A Comprehensive RF Characterization and Modeling Methodology for the 5nm Technology Node FinFETs” was published by researchers at IIT Kanpur, MaxLinear Inc., and University of California Berkeley. Abstract: "This paper aims to provide insights into the thermal, analog, and RF attributes, as well as a novel modeling methodology, for the FinFET at the industry stan... » read more

SRAM-Based IMC For Cryogenic CMOS Using Commercial 5 nm FinFETs

A technical paper titled “Cryogenic In-Memory Computing for Quantum Processors Using Commercial 5-nm FinFETs” was published by researchers at University of Stuttgart, Indian Institute of Technology Kanpur, University of California Berkeley, and Technical University of Munich. Abstract: "Cryogenic CMOS circuits that efficiently connect the classical domain with the quantum world are the co... » read more

What Designers Need To Know About GAA

While only 12 years old, finFETs are reaching the end of the line. They are being supplanted by gate-all-around (GAA), starting at 3nm [1], which is expected to have a significant impact on how chips are designed. GAAs come in two main flavors today — nanosheets and nanowires. There is much confusion about nanosheets, and the difference between nanosheets and nanowires. The industry still ... » read more