About five years ago, some chipmakers claimed that traditional silicon-based power MOSFETs had hit the wall, prompting the need for a new power transistor technology.
At the time, some thought that two wide-bandgap technologies—gallium nitride (GaN) on silicon and silicon carbide (SiC) MOSFETs—would displace the ubiquitous power MOSFET. In addition, GaN and SiC were supposed to pose a t...
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