Device Architecture For 2D Material-Based mNS-FETs In Sub-1nm Nodes (Sungkyunkwan Univ., Alsemy)


A new technical paper titled "Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes" was published by researchers at Sungkyunkwan University and Alsemy Inc. "This paper explores the design and optimization of multi-Nanosheet Field-Effect Transistors (mNS-FETs) employing a Transition Metal Dichalcogenide (TMDC) channel, specifically MoS2, for the 0.7 nm technology node u... » read more

Rapid Prototyping For Emerging Semiconductor Devices


A technical paper titled “Generating Predictive Models for Emerging Semiconductor Devices” was published by researchers at TU Darmstadt and NaMLab. Abstract: "Circuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred. However, for emerging device concepts with altered ... » read more

Design Optimization Of Split-Gate NOR Flash For Compute-In-Memory


A technical paper titled “Design Strategies of 40 nm Split-Gate NOR Flash Memory Device for Low-Power Compute-in-Memory Applications” was published by researchers at Seoul National University of Science and Technology and University of Seoul. Abstract: "The existing von Neumann architecture for artificial intelligence (AI) computations suffers from excessive power consumption and memo... » read more