New high-frequency transistors
The Fraunhofer Institute for Applied Solid State Physics IAF has developed a novel high-frequency transistor type—the metal oxide semiconductor HEMT or MOSHEMT.
Still in R&D, Fraunhofer’s MOSHEMT has reached record frequencies of 640GHz. MOSHEMTs are designed for the 100GHz frequency ranges and above. Applications include communications, radar and sens...
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