Topological Semimetal Synthesized Thin Film That Can Increase Power and Memory Storage While Using Less Energy

A technical paper titled "Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn and Pt3SnxFe1-x topological semimetal" was published by researchers at University of Minnesota. Abstract: "Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk ... » read more

Research Bits: July 18

Miniaturized ferroelectric FETs Researchers from the University of Pennsylvania, Hanyang University, King Abdulaziz University, King Abdullah University of Science and Technology, and University of Tokyo proposed a new ferroelectric FET (FE-FET) design with improved performance for both computing and memory. The transistor layers the two-dimensional semiconductor molybdenum disulfide (MoS2)... » read more