Novel Assist Layers To Enhance EUV Lithography Performance Of Photoresists On Different Substrates


In EUV lithography, good resist patterning requires an assist layer beneath it to provide adhesion to prevent pattern collapse of small features and allow for higher aspect ratios. In addition, future EUV high numerical aperture (NA) is expected to require a decrease in thickness from the overall patterning stack. In this study, we are exploring a fundamentally new approach to developing an alt... » read more

Assist Layers: The Unsung Heroes of EUV Lithography


Most discussions of advanced lithography focus on three elements — the exposure system, photomasks, and photoresists — but that's only part of the challenge. Successfully transferring a pattern from the photomask to a physical structure on the wafer also depends on a variety of films working together, including the underlayers, the developers, and a variety of surface treatments. In fact... » read more