tag: University of Electronic Science and Technology of China

MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors
By Technical Paper Link - 12 Oct, 2021 - Comments: 0

Abstract: "A MXene-GaN-MXene based multiple quantum well photodetector was prepared on patterned sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current, compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electrodes. Dark current of the device using MXene-GaN van der Waals junctions is reduced b... » read more

Power/Performance Bits: Jan. 29
By Jesse Allen - 29 Jan, 2019 - Comments: 0

Neural nets struggle with shape Cognitive psychologists at the University of California Los Angeles investigated how deep convolutional neural networks identify objects and found a big difference between the way these networks and humans perceive objects. In the first of a series of experiments, the researchers showed color images of animals and objects that had been altered to have a diffe... » read more

Power/Performance Bits: Aug. 28
By Jesse Allen - 28 Aug, 2018 - Comments: 0

Multilayer stretchable electronics Researchers at UC San Diego, the University of Electronic Science and Technology of China, and the Air Force Research Laboratory developed an approach to creating stacked, stretchable electronics with complex functionality. "Rigid electronics can offer a lot of functionality on a small footprint--they can easily be manufactured with as many as 50 layers of... » read more

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