Research Bits: Jan. 6


Ultrathin ferroelectric capacitors Researchers from the Institute of Science Tokyo and Canon ANELVA Corporation built an ultrathin ferroelectric memory capacitor stack using scandium-substituted aluminum nitride ((Al,Sc)N) thin films with platinum electrodes. The total thickness is just 30nm: a 20nm ferroelectric layer sandwiched between 5nm platinum top and bottom electrodes. “Previous r... » read more

Power/Performance Bits: Nov. 8


Molecular memristor Researchers from National University of Singapore, Indian Association for the Cultivation of Science, University of Limerick, Texas A&M University, and Hewlett Packard Enterprise discovered a molecular memristor for brain-inspired computing. The molecule uses natural asymmetry in its metal-organic bonds to switch between different states, which allows it to perform u... » read more