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Extending Copper Interconnects To 2nm


Transistor scaling is reaching a tipping point at 3nm, where nanosheet FETs will likely replace finFETs to meet performance, power, area, and cost (PPAC) goals. A significant architectural change is similarly being evaluated for copper interconnects at 2nm, a move that would reconfigure the way power is delivered to transistors. This approach relies on so-called buried power rails (BPRs) and... » read more

Capacity Constraints And DFM At Mature Nodes


We’re witnessing an interesting phenomenon in the SoC segment of the semiconductor industry today. One might call it the “forced waterfall effect.” What I’m referring to is the tendency for production at semiconductor nodes older than the leading edge to be under long-term foundry capacity constraints. Normally this occurs with the “hot process node,” that is, the leading edge wh... » read more