A new technical paper titled "Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold" was published by researchers at Politecnico di Milano, UT Austin, and STMicroelectronics.
Abstract:
"Two-dimensional (2D) materials are promising for resistive switching in neuromorphic and in-memory computing, as their atomic thickness substantially impr...
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