Will III-V Power Devices Happen?

By Ben Lee - 22 Sep, 2016 - Comments: 0

In a previous blog post, I provided a review of the overall power device market and trends driving changes in device evolution that entail materials innovation. For the industry to make such a shift, the advantages over mature, low-cost silicon technologies must be compelling and something the industry absolutely has to implement. Now I’d like to focus on new materials offering competitive be... » read more

RF GaN Gains Steam

By Mark LaPedus - 25 Jul, 2016 - Comments: 0

The RF [getkc id="217" kc_name="gallium nitride"] (GaN) device market is heating up amid the need for more performance with better power densities in a range of systems, such as infrastructure equipment, missile defense and radar. On one front, for example, RF GaN is beginning to displace a silicon-based technology for the power amplifier sockets in today’s wireless base stations. GaN is m... » read more

What Happened To GaN And SiC?

By Mark LaPedus - 03 Feb, 2015 - Comments: 6

About five years ago, some chipmakers claimed that traditional silicon-based power MOSFETs had hit the wall, prompting the need for a new power transistor technology. At the time, some thought that two wide-bandgap technologies—gallium nitride (GaN) on silicon and silicon carbide (SiC) MOSFETs—would displace the ubiquitous power MOSFET. In addition, GaN and SiC were supposed to pose a t... » read more

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tag: wide bandgap

Will III-V Power Devices Happen?

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What Happened To GaN And SiC?

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