3D Memory Structures: Common Hole And Tilt Metrology Techniques and Capabilities

A technical paper titled "Inline metrology of high aspect ratio hole tilt and center line shift using small-angle x-ray scattering" was published by researchers at Bruker Nano and Lam Research. Abstract: "High aspect ratio (HAR) structures found in three-dimensional nand memory structures have unique process control challenges. The etch used to fabricate channel holes several microns deep... » read more