Trench-based SiC MOSFETs have become feasible, and the dilemma between performance vs high reliability can be solved.
Silicon carbide (SiC) transistors are increasingly used in power converters, placing high demands on the size, weight and/or efficiency. The outstanding material properties of SiC enable the design of fastswitching unipolar devices as opposed to bipolar IGBT devices. Thus, solutions which have been up to now possible in the low-voltage world only (< 600 V) are now possible at higher voltages as well. The results are highest efficiency, higher switching frequencies, less heat dissipation, and space savings — benefits that can, in turn, also lead to overall lower cost. MOSFETs have been meanwhile commonly accepted to be the concept of choice. Initially, JFET structures seemed to be the ultimate choice for merging performance and reliability in a SiC transistor. However, with the now established 150 mm wafer technology, trench-based SiC MOSFETs have also become feasible, and thus, the DMOS dilemma of having either performance or high reliability could now be solved.
By Dr. Peter Friedrichs, Infineon Technologies
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