Advanced Packaging: IPL Reflow Technology For Thermal Regulation (Sungkyunkwan Univ.)


A new technical paper titled "A color-coded light-induced heating technology for Pb-free solder joints of advanced multi-semiconductor packaging" was published by researchers at Sungkyunkwan University. Excerpt from paper: "This study introduces a color-coded intense pulsed light (IPL) reflow process, leveraging differential light absorption for localized thermal modulation, enabling simu... » read more

Heat Dissipation in Solid-State Nanopore (Univ. of Osaka et al)


A new technical paper titled "Gate-Tunable Ionothermoelectric Cooling in a Solid-State Nanopore" was published by researchers at the University of Osaka, the University of Tokyo, National Institute of Advanced Industrial Science and Technology et al. The paper states: "Efficient heat dissipation at the nanoscale remains a major challenge for high-performance microelectronics. Here, we dem... » read more

The Thermal Trap: How Dielectrics Limit Device Performance


The spread of artificial intelligence is forcing an uncomfortable truth on semiconductor manufacturing. Thin films, which are essential for isolating signals and insulating different components and metal layers, are becoming heat traps as physical dimensions continue to shrink in chips used inside AI data centers. That, in turn, is limiting how fast these chips can process data and increasing t... » read more

Engineering Reliable Heat Dissipation With Indium-Silver Thermal Interfaces


In recent years, rapid technological advancements in the field of high-performance computing have driven the development of increasingly sophisticated and powerful computing devices. This growth is expected to continue, with expansion into areas such as central processing units (CPUs), artificial intelligence (AI) systems, and automotive products. Flip chip lidded ball grid array (FCLBGA) pa... » read more

Improving Verification Performance


Without methodology improvements, verification teams would not be able keep up with the growing complexity and breadth of the tasks assigned to them. Tools alone will not provide the answer. The magnitude of the verification task continues to outpace the tools, forcing design teams to seek out better ways to intermix and utilize the tools that are available. But as verification teams take on... » read more

Current Characterization Of Various Cu RDL Designs In Wafer Level Packages (WLP)


Copper (Cu) redistribution layer (RDL) technology is used to interconnect chips in various high current Wafer Level Packaging (WLP) applications. Typically, Cu RDLs with thicknesses of 5-9 µm and widths of 5-20 µm are used for high current sourcing. In this case, the temperature of the Cu RDL metal line increases due to the Joule heat generated when current passes through the metal line. If a... » read more

New Issues In Power Semiconductors


The number of challenges is growing in power semiconductors, just as it is in traditional chips. Thermal dissipation and gradients, new design rules, and layout issues need to be considered, especially in the context of higher voltage and increased performance demands. Roland Jancke, design methodology head in Fraunhofer IIS’ Engineering of Adaptive Systems Division, talks about issues in int... » read more

Self-Heating Issues Spread


With every new node there are additional physical effects that must be considered, but not all of them are of the same level of criticality. One that is being mentioned more frequently is self-heating. All devices consume power and when they do that, it becomes heat. "In essence, all active devices generate heat as carriers move, creating channels for current to pass through the gates," says... » read more

Designing For Thermal


Heat has emerged as a major concern for semiconductors in every form factor, from digital watches to data centers, and it is becoming more of a problem at advanced nodes and in advanced packages where that heat is especially difficult to dissipate. Temperatures at the base of finFETs and GAA FETs can differ from those at the top of the transistor structures. They also can vary depending on h... » read more

A Revolution For Power Conversion Systems — CoolSiC MOSFET


Silicon carbide (SiC) transistors are increasingly used in power converters, placing high demands on the size, weight and/or efficiency. The outstanding material properties of SiC enable the design of fastswitching unipolar devices as opposed to bipolar IGBT devices. Thus, solutions which have been up to now possible in the low-voltage world only (< 600 V) are now possible at higher voltages... » read more

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