Author's Latest Posts


Review Of Virtual Wafer Process Modeling And Metrology For Advanced Technology Development


Semiconductor logic and memory technology development continues to push the limits of process complexity and cost, especially as the industry migrates to the 5 nm node and beyond. Optimization of the process flow and ultimately quantifying its physical and electrical properties are critical steps in yielding mature technology. The standard build, test, and wait model of technology development ... » read more

Important Process Parameter And Its Sensitivity Check By Virtual Fabrication: Channel Hole Profile Impact On Advanced 3D NAND Structure


A virtual DOE-based process sensitivity check was performed for two tiers of channel holes in a 3D NAND device. The channel hole tilt distance, twist angle, and their sensitivities to the visible area in silicon-oxide-nitride-oxide (SONO) punch process were analyzed. The results show that controlling the upper tilt distance is more important for offering a larger visible area. Also, a negative ... » read more

Pathfinding By Process Window Modeling: Advanced DRAM Capacitor Patterning Process Window Evaluation Using Virtual Fabrication


In advanced DRAM, capacitors with closely packed patterning are designed to increase cell density. Thus, advanced patterning schemes, such as multiple litho-etch, SADP and SAQP processes may be needed. In this paper, we systematically evaluate a DRAM capacitor hole formation process that includes SADP and SAQP patterning, using virtual fabrication and statistical analysis in SEMulator3D. The pu... » read more

Pathfinding By Process Window Modeling


In advanced DRAM, capacitors with closely packed patterning are designed to increase cell density. Thus, advanced patterning schemes, such as multiple litho-etch, SADP and SAQP processes may be needed. In this paper, we systematically evaluate a DRAM capacitor hole formation process that includes SADP and SAQP patterning, using virtual fabrication and statistical analysis in SEMulator3D®. The ... » read more

A Study Of The Impact Of Line Edge Roughness On Metal Line Resistance Using Virtual Fabrication


BEOL metal line RC delay has become a dominant factor limiting chip operation speeds at advanced nodes. This is because smaller metal line pitches require narrower line CD and line-to-line spacing, which introduces higher metal line resistance and line-to-line capacitance. A surface scattering effect is the root cause for the exponentially increased metal resistivity at smaller metal line pitch... » read more

Ultra-Low Resonance Frequency MEMS Gravimeter With Off-Resonance Closed-Loop Control


This paper reports on a MEMS gravimeter that has a closed-loop system to maintain an ultra-low resonance frequency of 1Hz. The low resonance frequency is attained by using a spring that is the resultant of positive mechanical stiffnesses and negative electrical stiffnesses. Voltage-tunability of the electrical stiffness enables ultra-small and tunable total stiffness. To attain a quick response... » read more

Yield Enhancement By Virtual Fabrication


This paper provides an example of yield enhancement using virtual fabrication. A 6 transistors based static random access memory example on 7nm node technology was used in this case study. Yield loss caused by via contact-metal edge placement error was modeled and analyzed. The results show that yield can be enhanced from 48.4% to 99.0% through process window optimization and improved specifica... » read more

A Sub-1 Hz Resonance Frequency Resonator Enabled By Multi-Step Tuning For Micro-Seismometer


We propose a sub-1 Hz resonance frequency MEMS resonator that can be used for seismometers. The low resonance frequency is achieved by an electrically tunable spring with an ultra-small spring constant. Generally, it is difficult to electrically fine-tune the resonance frequency at a near-zero spring constant because the frequency shift per voltage will diverge at the limit of zero spring const... » read more

Evaluating The Impact Of STI Recess Profile Control On Advanced FinFET Device Performance


In this paper, a 5nm FinFET flow was built using the SEMulator3D virtual fabrication platform. Different STI (shallow trench isolation) recess profiles were investigated using the pattern-dependent etch capabilities of SEMulator3D, including changes in trenching/footing profile, fin height and imbalance fin height. The impact of STI recess profile on device performance was then investigated usi... » read more

Process Variation Analysis Of Device Performance Using Virtual Fabrication — Methodology Demonstrated On A CMOS 14-nm FinFET Vehicle


A new methodology is demonstrated to assess the impact of fabrication inherent process variability on 14-nm fin field effect transistor (FinFET) device performance. A model of a FinFET device was built using virtual device fabrication and testing. The model was subsequently calibrated on Design of Experiment corner case data that had been collected on a limited number of processed fab wafers. W... » read more

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