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Katherine Derbyshire

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Katherine Derbyshire is a technical editor at Semiconductor Engineering.

Author's Latest Posts

Ferroelectric Memories: The Middle Ground
By Katherine Derbyshire - 19 Jan, 2023 - Comments: 0

The first article in this series considered the use of ferroelectrics to improve subthreshold swing behavior in logic transistors. The prospects for ferroelectrics in logic applications are uncertain, but ferroelectric memories have clear advantages. The two most common commercial memories lie at opposite ends of a spectrum. DRAM is fast, but requires constant power to maintain its informat... » read more

Ferroelectrics: The Dream Of Negative Capacitance
By Katherine Derbyshire - 15 Dec, 2022 - Comments: 0

Ferroelectrics are getting a serious re-examination, as chipmakers look for new options to maintain drive current. Ferroelectric materials can provide non-volatile memory, serving an important functional gap somewhere between DRAM and flash memory. Indeed, ferroelectrics for memory and 2D channels for transistors were two highlights of the recent IEEE Electron Device Meeting. Ferroelectri... » read more

What’s Different About Next-Gen Transistors
By Katherine Derbyshire - 20 Oct, 2022 - Comments: 0

After nearly a decade and five major nodes, along with a slew of half-nodes, the semiconductor manufacturing industry will begin transitioning from finFETs to gate-all-around stacked nanosheet transistor architectures at the 3nm technology node. Relative to finFETs, nanosheet transistors deliver more drive current by increasing channel widths in the same circuit footprint. The gate-all-aroun... » read more

The High Price Of Smaller Features
By Katherine Derbyshire - 15 Sep, 2022 - Comments: 0

The semiconductor industry’s push for higher numerical apertures is driven by the relationship between NA and critical dimension. As the NA goes up, the CD goes down: Where λ is the wavelength and k1 is a process coefficient. While 0.55 NA exposure systems will improve resolution, Larry Melvin, principal engineer at Synopsys, noted that smaller features always come with a process cos... » read more

New Materials Open Door To New Devices
By Katherine Derbyshire - 21 Jul, 2022 - Comments: 0

Integrating 2D materials into conventional semiconductor manufacturing processes may be one of the more radical changes in the chip industry’s history. While there is pain and suffering associated with the introduction of any new materials in semiconductor manufacturing, transition metal dichalcogenides (TMDs) support a variety of new device concepts, including BEOL transistors and single-... » read more

High-NA EUV May Be Closer Than It Appears
By Katherine Derbyshire - 16 Jun, 2022 - Comments: 1

High-NA EUV is on track to enable scaling down to the Angstrom level, setting the stage for chips with even higher transistor counts and a whole new wave of tools, materials, and system architectures. At the recent SPIE Advanced Lithography conference, Mark Phillips, director of lithography hardware and solutions at Intel, reiterated the company’s intention to deploy the technology in high... » read more

Driving Toward More Rugged, Less Expensive SiC
By Katherine Derbyshire - 19 May, 2022 - Comments: 0

Silicon carbide is gaining traction in the power semiconductor market, particularly in electrified vehicles, but it's still too expensive for many applications. The reasons are well understood, but until recently SiC was largely a niche technology that didn't warrant the investment. Now, as demand grows for chips that can work in high-voltage applications, SiC is getting a much closer look. ... » read more

Hiding Security Keys Using ReRAM PUFs
By Katherine Derbyshire - 21 Apr, 2022 - Comments: 2

Resistive RAM and physically unclonable functions (PUFs) have been gaining traction for completely different reasons, but when combined they create an extremely secure and inexpensive way of storing authentication keys. As security concerns shift from purely software to a combination of hardware and software, chipmakers and systems companies have been scrambling to figure out how to prevent ... » read more

GaN ICs Wanted for Power, EV Markets
By Katherine Derbyshire - 17 Mar, 2022 - Comments: 0

Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon circuits. These benefits include lower cost as the circuit footprint is scaled, and reduced parasitic resistance and capacitance with shorter interconnect runs. In addition, improved device perf... » read more

2D Semiconductors Make Progress, But Slowly
By Katherine Derbyshire - 28 Feb, 2022 - Comments: 2

Researchers are looking at a variety of new materials at future nodes, but progress remains slow. In recent years, 2D semiconductors have emerged as a leading potential solution to the problem of channel control in highly scaled transistors. As devices shrink, the channel thickness should shrink proportionally. Otherwise, the gate capacitance won’t be large enough to control the flow of cu... » read more

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