Rowhammer Protection By Addressing Root Cause (Georgia Tech)


A new technical paper titled "Preventing Rowhammer Exploits via Low-Cost Domain-Aware Memory Allocation" was published by researchers at Georgia Tech. Abstract "Rowhammer is a hardware security vulnerability at the heart of every system with modern DRAM-based memory. Despite its discovery a decade ago, comprehensive defenses remain elusive, while the probability of successful attacks grows ... » read more

Review Paper: Challenges Required To Bring the Energy Consumption Down in Microelectronics (Rice, UC Berkeley, Georgia Tech, Et al.)


A new review article titled "Roadmap on low-power electronics" by researchers at Rice University, UC Berkeley, Georgia Tech, TSMC, Intel, Harvard, et al. This roadmap to energy efficient electronics written by numerous collaborators covers materials, modeling, architectures, manufacturing, metrology and more. Find the technical paper here. September 2024. Ramamoorthy Ramesh, Sayeef Sal... » read more

Gold Substrate Plays Boosts Performance of Tellurium-Based Memristors


A new technical paper titled "Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold" was published by researchers at Politecnico di Milano, UT Austin, and STMicroelectronics. Abstract: "Two-dimensional (2D) materials are promising for resistive switching in neuromorphic and in-memory computing, as their atomic thickness substantially impr... » read more

Ambipolar Schottky-based FeFET For Ultrascaled Memory Applications


A new technical paper titled "On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices" was published by researchers at Global TCAD Solutions, Igor Sikorsky Kyiv Polytechnic Institute, INSA Lyon, and NaMLab. "Here, we promote an ambipolar Schottky-based ferroelectric transistor (AS-FeFET) as an alternative design. We demonstr... » read more

Chip Industry Week In Review


Amkor will provide turnkey advanced packaging and test services to TSMC in Amkor's planned facility in Peoria, Arizona, in a deal announced on Thursday. The companies jointly specified the packaging technologies, such as TSMC’s Integrated Fan-Out (InFO) and Chip on Wafer on Substrate (CoWoS). President Biden signed into law a bill that exempts some semiconductor projects funded by the U.S.... » read more

Partitioning In The Chiplet Era


The widespread adoption of chiplets in domain-specific applications is creating a partitioning challenge that is much more complex than anything chip design teams have dealt with in previous designs. Nearly all the major systems companies, packaging houses, IDMs, and foundries have focused on chiplets as the best path forward to improve performance and reduce power. Signal paths can be short... » read more

TSMC’s Plan For Closing The Communication Gap


TSMC held its North American Open Innovation Platform (OIP) Ecosystem Forum at the Santa Clara County Convention Center on Sept. 25, providing a quick roadmap update and to recognize its partners for all the collaborative work needed to keep the TSMC innovation train rolling and enabling its customers to utilize the latest technologies. L.C. Lu, TSMC fellow and vice president of R&D, sai... » read more

Working With Chiplets


The usual method of migrating to the next process node to cram more features onto a piece of silicon no longer works. It's too expensive, and too limited for most applications. The path forward is now heterogeneous chiplets targeted at specific markets, and while logic will continue to scale, other features are being separated out into chiplets developed using different process technologies. Th... » read more

Preparing For Ferroelectric Devices


The discovery of ferroelectricity in materials that are compatible with integrated circuit manufacturing has sparked a wave of interest in ferroelectric devices. Ferroelectrics are materials with a permanent polarization, the direction of which can be switched by an applied field. This polarization can be used to raise or lower the threshold voltage of a transistor, as in FeFETs, or it can c... » read more

Research Bits: Oct. 1


Rust-resistant coating for 2D semiconductors Researchers from Pennsylvania State University, National Yang Ming Chiao Tung University in Taiwan, Purdue University, Intel, and the Kurt J. Lesker Company developed a synthesis process to produce a rust-resistant coating with properties ideal for creating faster, more durable electronics. "One of the biggest issues that we see in 2D semiconduct... » read more

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