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Short-Circuit Ruggedness In SiC MOSFETs


Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching devices. As a result, outstanding system performance is achieved, enabling higher efficiency, power density, and reduced system cost for many applications. Today, for major target applications for S... » read more

Benefits Of SiC For String Inverters


SiC MOSFETs in solar and energy storage applications have clear benefits compared to silicon technologies, addressing the pressing need for energy and cost savings, particularly when bidirectional power conversion is required. Ease of installation is one of the key features of high-power solar string inverters. It is beneficial if only two workers are needed to carry and install the system.... » read more

SiC And Industrial Servos: A Perfect Match


The automation engineers of the 1960s would look with envy at the servo technology in use today. Small, precise, and, above all, electric, they are a reflection of the compactness of the semiconductor control, sensor, and power technology we have available today. Today’s biggest challenge remains the cabling between the servo and its controller. Notoriously expensive, due to having to withsta... » read more

SiC MOSFETs In The Landscape Of Modern Power Devices


Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated Gate Bipolar Transistors) have been the prevailing component of choice before. But which role do SiC MOSFETs play in today’s landscape of power devices? With SiC MOSFETs (Metal-Oxide-Semicond... » read more

Controlling The Reliability Of Silicon Carbide-Based Devices


The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher frequencies, and with higher breakdown voltage characteristics, SiC power transistors are quickly becoming an attractive silicon alternative for high power density and/or high-efficiency power conver... » read more