category: Linking Real And Digital Worlds

category: IoT, Security & Automotive

Wave Hello To Improved Performance
By Luciana Caminha Afonso - 13 Sep, 2022 - Comments: 0

The International Energy Agency (IEA) estimated that in 2019, approximately 33 percent of all transportation-related CO2 emissions were generated by buses and light to heavy commercial vehicles. Transitioning to electric drives in this sector could clearly have a significant impact on reducing our emissions, but electrifying such demanding vehicles is not an easy task. Many of the concepts... » read more

PCB Layout Tips For Low Side Gate Drivers With OCP
By Weidong Chu - 10 Mar, 2022 - Comments: 0

Our 1ED44173/5/6 are the new low side gate driver ICs that integrate over-current protection (OCP), FAULT status output and enable function. This high integration level is excellent for the digitally controlled Power Factor Correction (PFC) applications with boost topology and ground reference switching. In PFC applications, shunts are used to sense power switch current or DC bus current... » read more

Choosing A Gate Driver For Silicon Carbide MOSFETs
By Olaf Bendix - 14 Oct, 2021 - Comments: 0

If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it? The answer to this question is: identify a suitable gate driver IC based on the peak current and power dissipation requirements of your application and a fitting gate resistor for your SiC... » read more

Short-Circuit Ruggedness In SiC MOSFETs
By Zhihui Yuan - 13 Sep, 2021 - Comments: 1

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching devices. As a result, outstanding system performance is achieved, enabling higher efficiency, power density, and reduced system cost for many applications. Today, for major target applications for S... » read more

Benefits Of SiC For String Inverters
By Suresh Thangavel - 08 Jul, 2021 - Comments: 0

SiC MOSFETs in solar and energy storage applications have clear benefits compared to silicon technologies, addressing the pressing need for energy and cost savings, particularly when bidirectional power conversion is required. Ease of installation is one of the key features of high-power solar string inverters. It is beneficial if only two workers are needed to carry and install the system.... » read more

SiC And Industrial Servos: A Perfect Match
By Michael Ebli - 10 Jun, 2021 - Comments: 0

The automation engineers of the 1960s would look with envy at the servo technology in use today. Small, precise, and, above all, electric, they are a reflection of the compactness of the semiconductor control, sensor, and power technology we have available today. Today’s biggest challenge remains the cabling between the servo and its controller. Notoriously expensive, due to having to withsta... » read more

SiC MOSFETs In The Landscape Of Modern Power Devices
By Peter Friedrichs - 08 Apr, 2021 - Comments: 0

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated Gate Bipolar Transistors) have been the prevailing component of choice before. But which role do SiC MOSFETs play in today’s landscape of power devices? With SiC MOSFETs (Metal-Oxide-Semicond... » read more

Controlling The Reliability Of Silicon Carbide-Based Devices
By Peter Friedrichs - 11 Mar, 2021 - Comments: 0

The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher frequencies, and with higher breakdown voltage characteristics, SiC power transistors are quickly becoming an attractive silicon alternative for high power density and/or high-efficiency power conver... » read more

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