What’s Next For Through-Silicon Vias


From large TSVs for MEMS to nanoTSVs for backside power delivery, cost-effective process flows for these interconnects are essential for making 2.5D and 3D packages more feasible. Through-silicon vias (TSVs) enable shorter interconnect lengths, which reduces chip power consumption and latency to carry signals faster from one device to another or within a device. Advanced packaging technology... » read more

Optimizing New Interconnect Technologies To Support Next-Generation Semiconductor Devices


Interconnects are the wiring system that connect together the components of a semiconductor device and permit these components to work together. One of the key metrics of any semiconductor interconnect scheme is the metal pitch size. Metal pitch is the minimum distance between the centers of two horizontal interconnects in a semiconductor. It's a key metric used to measure the progress of chip ... » read more

Heterogenous Integration Expertise for Sensors and MEMS Packaging and Assembly


Sensors and microelectromechanical systems (MEMS) are unlocking new design possibilities for miniature devices used in healthcare, smart systems, consumer electronics, and more. Designers need a partner experienced with Heterogenous Integration (HI) to assemble the unique components for these devices and address the complications of these integrations. In this white paper, you will learn: ... » read more

Laser Ablation Dicing Revolutionizes Ultra-Thin Wafer Saws Beyond The Capability Of Blade Dicing


The demand for consistently high electrical performance in the power discrete semiconductor market has driven component developers to continuously enhance semiconductor assembly packaging technology through advanced package design and wafer fabrication methods. Among the cost-effective approaches are increasing the die area size and decreasing the die thickness, which minimize electrical resist... » read more

TCAD Simulation Challenges For Gate-All-Around Transistors


By Victor Moroz and Shela Aboud The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of transistor design that need to be addressed. One of the challenges is handling the thin Si layers that come with GAA technology, where Si channel thickness scale... » read more

Baby Steps Toward 3D DRAM


Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But the equally important DRAM has achieved a similar manufacturable 3D architecture. The need for a sufficiently large means of storing charge — such as a capacitor — has proved elusive. Severa... » read more

Do More With Less In Semiconductor Manufacturing


The recent resolution of labor disputes sheds light on a universal concern: the balance between automation and workforce dynamics. These situations mirror a challenge faced in semiconductor manufacturing—embracing AI without displacing the people driving the industry. Moving beyond automation fears US port workers expressed concerns about automation technologies, such as autonomous cranes a... » read more

Accelerating The AI Economy Through Heterogeneous Integration


The world is rapidly transitioning from an internet economy to an AI economy. In the internet economy, we stayed constantly connected to the internet 24/7 through our smartphones, PCs, and IoT devices. However, in the AI economy, every aspect of our lives is interwoven with artificial intelligence. You may already be familiar with AI tools such as ChatGPT or Google Gemini, which answer question... » read more

Navigating Increased Complexity In Advanced Packaging


As chips evolve toward stacked, heterogeneous assemblies and adopt more complex materials, engineers are grappling with new and often less predictable sources of variation. This is redefining what it means to achieve precision, forcing companies to rethink everything from process control and in-line metrology to materials selection and multi-level testing. These assemblies are the result of ... » read more

Challenges In Powering Electrification With GaN And SiC


The wish list of device properties that designers of power management systems would like to have is lengthy, but no single material is yet sufficient for the full range of power control applications. For control transistors to handle power surges, breakdown voltages should be at least triple the expected operating voltage — 1.2 kilovolts or more for many electric vehicle applications, and ... » read more

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