category: Manufacturing, Packaging and Materials

category: IoT, Security & Automotive

Current Characterization Of Various Cu RDL Designs In Wafer Level Packages (WLP)
By JeongMin Ju - 15 Aug, 2024 - Comments: 0

Copper (Cu) redistribution layer (RDL) technology is used to interconnect chips in various high current Wafer Level Packaging (WLP) applications. Typically, Cu RDLs with thicknesses of 5-9 µm and widths of 5-20 µm are used for high current sourcing. In this case, the temperature of the Cu RDL metal line increases due to the Joule heat generated when current passes through the metal line. If a... » read more

Bringing Curvilinear Data To Mask Data Prep
By Al Blais - 15 Aug, 2024 - Comments: 0

Advanced nodes that have been leveraging curvilinear correction with technologies such as ILT and curvilinear OPC are increasingly requiring the use of curvilinear masks to meet advanced feature size and pitch requirements. However, building curvilinear masks with standard OASIS file formats can come at the cost of large file sizes, increased turnaround time, and reduced quality of results. The... » read more

Building Smarter, Better Fabs
By Laura Peters - 15 Aug, 2024 - Comments: 0

Battling labor shortages, faster ramp rates, and data overload, the process of designing and building greenfield fabs requires a combination of tech tools, failing earlier approaches and superior planning from day one. The complexity and scale of semiconductor fabs is skyrocketing as is the capital cost. Chipmakers are looking to ramp multibillion dollar fabs faster despite the hurdles of la... » read more

Improving Parasitic Capacitance In Next-Generation DRAM Devices
By Dempsey Deng - 15 Aug, 2024 - Comments: 0

As conventional DRAM devices continue to shrink, increases in parasitic capacitance at smaller dimensions can negatively impact device performance. New DRAM structures may be needed in the future, to lower total capacitance and achieve acceptable device performance. In this study, we compare the parasitic capacitance of a 6F2 honeycomb dynamic random-access memory (DRAM) device to the parasitic... » read more

Five Questions To Ask When Selecting A Temporary Bonding And Debonding System
By Jessica Albright - 15 Aug, 2024 - Comments: 0

High-bandwidth memory blocks (HBM), microprocessors, field-programmable gate arrays (FPGA), AI accelerators, and other devices used in advanced system-level packaging all rely on temporary bonding and debonding systems to shrink their footprint. Understanding which properties play the most crucial role in device reliability and efficient production will ensure you are maximizing your yield, whi... » read more

Why Small Fab And Assembly Houses Are Thriving
By Bryon Moyer - 15 Aug, 2024 - Comments: 0

High-volume products get more than their fair share of attention in the semiconductor world, but most chips don't fit into that category. While a few huge fabs and offshore assembly and test (OSAT) houses process enormous volumes of chips, small fabs and packaging lines serve for lower volumes, specialized technology, and prototyping. “There are companies that run literally one lot of 25 w... » read more

Securing Supply Chains At SEMICON West 2024
By John Cooney - 15 Aug, 2024 - Comments: 0

Jose Fernandez, U.S. Under Secretary of State for Economic Growth, Energy, and the Environment, sat down with Joe Stockunas, President of SEMI Americas, for a fireside chat on the CEO Summit keynote stage at SEMICON West 2024. In the Securing Critical Supply Chains for the 21st Century discussion, Fernandez emphasized the need to form partnerships to address vulnerabilities as the key to cre... » read more

Reasons To Know IGZO
By Katherine Derbyshire - 15 Aug, 2024 - Comments: 0

Interest in monolithic 3D integration is driven by both compute-in-memory applications and a more general need for increased circuit density. Compute-in-memory architectures seek to reduce the power requirements of machine learning workloads, which are dominated by the movement of data between memory and logic components. Even in conventional architectures, though, placing high-density, high-ba... » read more

Key Technologies To Extend EUV To 14 Angstroms
By Laura Peters - 29 Jul, 2024 - Comments: 2

The top three foundries plan to implement high-NA EUV lithography as early as 2025 for the 18 angstrom generation, but the replacement of single exposure high-NA (0.55) over double patterning with standard EUV (NA = 0.33) depends on whether it provides better results at a reasonable cost per wafer. So far, 2024 has been a banner year for high-numerical aperture EUV lithography. Intel Foundry... » read more

Legacy Process Nodes Going Strong
By Bryon Moyer - 23 Jul, 2024 - Comments: 0

While all eyes tend to focus on the leading-edge silicon nodes, many mature nodes continue to enjoy robust manufacturing demand. Successive nodes stopped reducing die cost at around the 20nm node. “In the finFET era of processes, esoteric process requirements necessary to move technology forward with each generation have added significant cost and complexity,” explained Andrew Appleby, p... » read more

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