Reasons To Know IGZO


Interest in monolithic 3D integration is driven by both compute-in-memory applications and a more general need for increased circuit density. Compute-in-memory architectures seek to reduce the power requirements of machine learning workloads, which are dominated by the movement of data between memory and logic components. Even in conventional architectures, though, placing high-density, high-ba... » read more

Key Technologies To Extend EUV To 14 Angstroms


The top three foundries plan to implement high-NA EUV lithography as early as 2025 for the 18 angstrom generation, but the replacement of single exposure high-NA (0.55) over double patterning with standard EUV (NA = 0.33) depends on whether it provides better results at a reasonable cost per wafer. So far, 2024 has been a banner year for high-numerical aperture EUV lithography. Intel Foundry... » read more

Legacy Process Nodes Going Strong


While all eyes tend to focus on the leading-edge silicon nodes, many mature nodes continue to enjoy robust manufacturing demand. Successive nodes stopped reducing die cost at around the 20nm node. “In the finFET era of processes, esoteric process requirements necessary to move technology forward with each generation have added significant cost and complexity,” explained Andrew Appleby, p... » read more

Precision Patterning Options Emerge For Advanced Packaging


The chip industry is ratcheting up investments in advanced packaging as it strives to keep pace with demands for increased functionality and higher performance, including novel patterning technologies that can reduce costs and speed time to market. Success in advanced packages is partly dependent on effectively managing the interconnectivity between the chips, which requires increasingly pre... » read more

Improving Line Edge Roughness Using Virtual Fabrication


Line edge roughness (LER) is a variation in the width of a lithographic pattern along one edge of a structure inside a chip. Line edge roughness can be a critical variation source and defect mechanism in advanced logic and memory devices and can lead to poor device performance or even device failure. [1~3]. Deposition-etch cycling is an effective technique to reduce line edge roughness. In this... » read more

Reliability Performance Of S-Connect Module (Bridge Technology) For Heterogeneous Integration Packaging


With the explosive increase in demand for artificial intelligence (AI), autonomous driving, Internet of Things (IoT), data centers, augmented reality and virtual reality (AR/VR), the market of high-performance computing (HPC) applications is growing rapidly [2]. And, the HPC market requires high processing speed, fast network clusters and large parallel computing. To meet the market requirement... » read more

Metrology Analysis Tool For Photolithography Process Characterization At Advanced Nodes


Continued scaling of integrated circuits to smaller dimensions is still a viable way to increase compute power, achieve higher memory cell density, or reduce power consumption. These days, chip makers are using single-digit nanometer figures or even Angstrom to label their manufacturing technology nodes, which are associated with the size of features patterned during the lithography process. ... » read more

European Mask And Lithography Conference 2024 Worth Attending


The European Mask and Lithography Conference (EMLC) 2024 recently was held in Grenoble, France, and had about 190 participants from a wide range of companies and institutions. Being relatively new to the field of lithography (my background is EDA, machine learning, optimization) and not being a fan of gigantic conferences, I thought it would be a good idea to visit this conference. My main p... » read more

CD Spec For Curvilinear Masks


Within the photomask industry, there's a major transformation from conventional Manhattan masks to more advanced curvilinear masks. Researchers from D2S and Micron Technology propose an equivalent CD spec for the curvy masks and use this spec to show that curvy masks have smaller mask variations than Manhattan masks. Find the technical paper here. Published June 2024. Linyong (Leo) Pang, ... » read more

New Interconnect Metals Need New Dielectrics


Just as circuit metallization must evolve to manage resistance as features shrink, so must the dielectric half of the interconnect stack. For quite some time, manufacturers have needed a dielectric constant (k) less than 4, which is the value for SiO2, but they have struggled to find materials that combine a low dielectric constant with mechanical and chemical stability. In work presented at... » read more

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