2D materials in 3D transistors
Researchers at the University of California Santa Barbara investigated 3D gate-all-around (GAA) transistors made using 2D semiconductors. They considered three different approaches to channel stacking: nano-sheet FETs, nano-fork FETs, and nano-plate FETs.
The nano-plate FET architecture, which exploits lateral stacking of 2D layers, was found to maximize the g...
» read more
