Chip Industry Technical Paper Roundup: July 1


New technical papers recently added to Semiconductor Engineering’s library: [table id=426 /] Find more semiconductor research papers here. » read more

Research Bits: July 1


Copper-to-copper bonding for GaN integration Researchers from MIT, Georgia Tech, and Air Force Research Laboratory propose a bonding process to integrate gallium nitride (GaN) transistors onto standard silicon CMOS chips. They used the process to create a power amplifier. “We wanted to combine the functionality of GaN with the power of digital chips made of silicon, but without having to ... » read more

Research Bits: June 24


In-sensor visual processing Researchers from the University of Massachusetts Amherst created silicon-based in-sensor visual processing arrays that can both capture and process visual data in the analog domain to reduce the latency between sensing and identification. The team created two integrated arrays of gate-tunable silicon photodetectors that share bipolar analog output and low-power o... » read more

Chip Industry Technical Paper Roundup: June 24


New technical papers recently added to Semiconductor Engineering’s library: [table id=442 /] Find more semiconductor research papers here. » read more

Chip Industry Technical Paper Roundup: June 17


New technical papers recently added to Semiconductor Engineering’s library: [table id=440 /] Find more semiconductor research papers here.   » read more

Research Bits: June 17


Superlattice castellated FETs Researchers from the University of Bristol and Northrop Grumman Mission Systems discovered a latch-effect in gallium nitride (GaN) that could lead to improved radio frequency device performance, crucial for enabling 6G devices. “We have piloted a device technology, working with collaborators, called superlattice castellated field effect transistors (SLCFETs),... » read more

Research Bits: June 9


InGaOx GAA transistor Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx). Doping indium oxide with gallium suppressed oxygen vacancies, improving transistor reliability. "We wanted our crystalline oxide transistor to feature a 'gate-all-around' structure, whereby the gate, which turns the current on or off, surrounds t... » read more

Chip Industry Technical Paper Roundup: June 9


New technical papers recently added to Semiconductor Engineering’s library: [table id=438 /] Find more semiconductor research papers here. » read more

Chip Industry Technical Paper Roundup: June 3


New technical papers recently added to Semiconductor Engineering’s library: [table id=436 /] Find more semiconductor research papers here. » read more

Research Bits: June 3


Imaging power electronics Researchers from the Institute of Science Tokyo, Harvard University, and Hitachi used diamond quantum sensors to analyze the magnetization response of soft magnetic materials used in power electronics. The method can simultaneously image both the amplitude and phase of AC stray fields over a wide frequency range up to 2.3 MHz. It uses a diamond quantum sensor with ... » read more

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