category: Research

category: IoT, Security & Automotive

Manufacturing Bits: Jan. 7
By Mark LaPedus - 07 Jan, 2020 - Comments: 0

Beyond 5G chips At the recent IEEE International Electron Devices Meeting (IEDM), NTT and the Tokyo Institute of Technology presented a paper on a technology that could enable high-speed wireless devices beyond the 5G standard. Researchers have devised a 300GHz wireless transceiver (TRx) that supports a data rate of more than 100Gb/s. The device is based on a technology called indium phosph... » read more

Power/Performance Bits: Jan. 7
By Jesse Allen - 07 Jan, 2020 - Comments: 0

Ferroelectric FET Researchers at Purdue University developed a ferroelectric transistor capable of both processing and storing information. The ferroelectric semiconductor field-effect transistor is made of alpha indium selenide, which overcomes the problem of ferroelectric materials not interfacing well with silicon. “We used a semiconductor that has ferroelectric properties. This way tw... » read more

Manufacturing Bits: Dec. 31
By Mark LaPedus - 31 Dec, 2019 - Comments: 0

GaN-on-SOI power semis At the recent IEEE International Electron Devices Meeting (IEDM), Imec and KU Leuven presented a paper on a gallium-nitride (GaN) on silicon-on-insulator (SOI) technology for use in developing GaN power devices. With GaN-on-SOI technology, researchers have developed a 200-volt GaN power semiconductor device with an integrated driver and fast switching performance. ... » read more

Power/Performance Bits: Dec. 31
By Jesse Allen - 31 Dec, 2019 - Comments: 0

Three-valued memory Scientists at the Tokyo Institute of Technology and the University of Tokyo developed a new three-valued memory device inspired by solid lithium-ion batteries which could potentially serve as low power consumption RAM. The new device consisted of a stack of three solid layers made of lithium, lithium phosphate, and gold. This stack is essentially a miniature low-capacity... » read more

Manufacturing Bits: Dec. 23
By Mark LaPedus - 23 Dec, 2019 - Comments: 0

Gallium oxide transistors At the recent IEEE International Electron Devices Meeting (IEDM), Cornell University and Hosei University presented a paper on a gallium oxide vertical transistor with a record breakdown voltage. Crystalline beta gallium oxide is a promising wide bandgap semiconductor material, which is used for power semiconductor applications. Gallium oxide has a large bandgap of... » read more

Power/Performance Bits: Dec. 23
By Jesse Allen - 23 Dec, 2019 - Comments: 0

High mobility transistor Engineers at the University of Delaware created a high-electron mobility transistor, a device that amplifies and controls electrical current, using gallium nitride (GaN) with indium aluminum-nitride as the barrier on a silicon substrate. Among devices of its type, the team says their transistor has record-setting properties, including record low gate leakage current... » read more

Manufacturing Bits: Dec. 16
By Mark LaPedus - 16 Dec, 2019 - Comments: 0

Imec-Leti alliance At the recent IEEE International Electron Devices Meeting (IEDM), Imec and Leti announced plans to collaborate in select areas. The two R&D organizations plan to collaborate in two areas—artificial intelligence (AI) and quantum computing. Imec and Leti have been separately working on AI technologies based on various next-generation memory architectures. Both entitie... » read more

Power/Performance Bits: Dec. 16
By Jesse Allen - 16 Dec, 2019 - Comments: 0

Carbon nanotubes for RF Researchers at Carbonics, Inc., University of Southern California, and King Abdulaziz City for Science and Technology, funded by the Army Research Office, propose using carbon nanotubes for radio frequency applications. The team's carbon nanotube device beat traditional RF-CMOS technology, achieved speeds exceeding 100GHz. This could boost mmWave, which in turn would... » read more

Manufacturing Bits: Dec. 9
By Mark LaPedus - 09 Dec, 2019 - Comments: 0

Metalens breakthroughs Using a conventional lithography system, Harvard has developed what researchers call an all-glass, centimeter-scale metalens. A metalens is a flat surface, which makes use of nanostructures to focus light. It’s a disruptive technology that could displace traditional glass-based lenses. Applications include virtual reality (VR) devices, biological imaging techniques ... » read more

Power/Performance Bits: Dec. 9
By Jesse Allen - 09 Dec, 2019 - Comments: 0

Solar capture and storage Researchers at the University of Houston developed a device capable of both capturing and storing solar energy. Unlike solar panels and solar cells, which rely on photovoltaic technology for the direct generation of electricity, the hybrid device captures heat from the sun and stores it as thermal energy. The device combines molecular energy storage and latent heat... » read more

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