category: Research

category: Auto, Security & Edge AI

Manufacturing Bits: June 22
By Mark LaPedus - 22 Jun, 2021 - Comments: 1

5G metasurface antennas At the recent 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), the Institute of Microelectronics of the Chinese Academy of Sciences (CAS) presented a paper on a low-profile broadband metasurface antenna for 5G antenna-in-package applications. The National Center for Advanced Packaging and the University of Chinese Academy of Sciences also contri... » read more

Power/Performance Bits: June 22
By Jesse Allen - 22 Jun, 2021 - Comments: 0

Terahertz silicon multiplexer Researchers from Osaka University and University of Adelaide designed a silicon multiplexer for terahertz-range communications in the 300-GHz band. “In order to control the great spectral bandwidth of terahertz waves, a multiplexer, which is used to split and join signals, is critical for dividing the information into manageable chunks that can be more easily... » read more

Manufacturing Bits: June 15
By Mark LaPedus - 15 Jun, 2021 - Comments: 0

Next-gen RF signal processors Sandia National Laboratories has taken steps to realize the development of acoustic wave amplifiers, a technology that could one day pave the way towards long-awaited tiny RF signal processors. Researchers have developed piezoelectric acoustic devices using surface acoustic wave (SAW) technology and demonstrated the ability to manufacture these devices. Still i... » read more

Power/Performance Bits: June 15
By Jesse Allen - 15 Jun, 2021 - Comments: 0

Low-loss photonic IC Researchers at EPFL built a photonic integrated circuit with ultra-low loss. The team focused on silicon nitride (Si3N4), which has orders of magnitude lower optical loss compared to silicon. It is used in low-loss applications such as narrow-linewidth lasers, photonic delay lines, and nonlinear photonics. In applying the material to photonic ICs, they took advantage... » read more

Manufacturing Bits: June 7
By Mark LaPedus - 07 Jun, 2021 - Comments: 0

High-voltage superjunction SiC devices The University of Warwick and Cambridge Microelectronics have presented a paper on the latest effort to develop of a new type silicon carbide (SiC) power device called a SiC superjunction Schottky diode. Researchers have simulated and optimized the development of 4H-SiC superjunction Schottky diodes at a voltage class of 1700 volts, aiming for breakdow... » read more

Power/Performance Bits: June 7
By Jesse Allen - 07 Jun, 2021 - Comments: 0

Commercializing photonic MEMS Researchers from the University of California Berkeley, Daegu Gyeongbuk Institute of Science & Technology, SUSS MicroOptics, TSI Semiconductors, Gwangju Institute of Science and Technology, KAIST, Ecole Polytechnique Fédérale de Lausanne (EPFL), and Korea Polytechnic University demonstrated a path for commercial fabrication of photonic MEMS. Photonic MEMS... » read more

Manufacturing Bits: June 1
By Mark LaPedus - 01 Jun, 2021 - Comments: 0

Frozen finFETs The Defense Advanced Research Projects Agency (DARPA) has launched the Low Temperature Logic Technology (LTLT) program, an effort to develop finFETs that operate at temperatures close to liquid nitrogen (~77K or minus 321 degrees Fahrenheit). The goal of LTLT is to develop low-temperature finFET transistors at the 14nm node and below by making modifications to the manufacturi... » read more

Power/Performance Bits: June 1
By Jesse Allen - 01 Jun, 2021 - Comments: 0

Stronger PUFs Researchers from Ohio State University and Potomac Research propose a new version of physical unclonable functions, or PUFs, that could be used to create secure ID cards, to track goods in supply chains, and as part of authentication applications. "There's a wealth of information in even the smallest differences found on computers chips that we can exploit to create PUFs," sai... » read more

Manufacturing Bits: May 25
By Mark LaPedus - 25 May, 2021 - Comments: 0

Higher voltage GaN Imec and Aixtron have demonstrated the ability to extend gallium-nitride (GaN) to new voltage levels in the power semiconductor market, enabling the technology to compete in much broader segments. Imec and Aixtron have demonstrated epitaxial growth of GaN buffer layers qualified for 1,200-volt applications on specialized 200mm substrates with a hard breakdown exceeding 1,... » read more

Power/Performance Bits: May 25
By Jesse Allen - 25 May, 2021 - Comments: 0

5G energy harvesting Researchers at Georgia Institute of Technology propose a way to harvest power for IoT devices using 5G networks. The team's device uses a flexible Rotman lens-based rectifying antenna (rectenna) system capable of millimeter-wave harvesting in the 28-GHz band. “With this innovation, we can have a large antenna, which works at higher frequencies and can receive power fr... » read more

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