Power/Performance Bits: Jan. 14


Optical memory Researchers at the University of Oxford, University of Exeter, and University of Münster propose an all-optical memory cell that can store more optical data, 5 bits, in a smaller space than was previously possible on-chip. The optical memory cell uses light to encode information in the phase change material Ge2Sb2Te5. A laser causes the material to change between ordered and... » read more

Manufacturing Bits: Jan. 8


Atom interferometry NASA and AOSense have demonstrated a prototype quantum sensor that uses a measurement technique called atom interferometry. The technology could one day enable more accurate gravitational measurements, climate-monitoring missions in space and other applications. Originally developed in the 1980s, atom interferometry is like today’s optical interferometry. Used in sc... » read more

System Bits: Jan. 8


Measure twice, cut once University of Texas Southwestern Medical Center researchers are working with a robotic device that can perform laparoscopic surgery through a single incision, an operation that typically requires five or six small incisions. The device is called the SP Robot, developed by Intuitive Surgical. It features four arms that go into the body through a 1-inch incision. UT South... » read more

Power/Performance Bits: Jan. 8


Ferrimagnetic memory Engineers at the National University of Singapore, Toyota Technological Institute, and Korea University propose a new type of spintronic memory that is 20 times more efficient and 10 times more stable than commercial ones. In spintronic devices, data is stored depending on up or down magnetic states. Current devices based on ferromagnets, however, suffer from a few issu... » read more

Manufacturing Bits: Jan. 2


Better nanowire MOSFETs At the recent IEEE International Electron Devices Meeting (IEDM), Imec and Applied Materials presented a paper on a new and improved way to fabricate vertically stacked gate-all-around MOSFETs. More specifically, Imec and Applied reported on process improvements for a silicon nanowire MOSFET, which is integrated in a CMOS dual work function metal replacement metal ga... » read more

Power/Performance Bits: Jan. 2


High-temp electronics Researchers at Purdue University, UC Santa Cruz, and Stanford developed a semiconducting plastic capable of operating at extreme temperatures. The new material, which combines both a semiconducting organic polymer and a conventional insulating organic polymer could reliably conduct electricity in up to 220 degrees Celsius (428 F). "One of the plastics transports the ch... » read more

System Bits: Jan. 2


Princeton plumbs blockchain technology Researchers at Princeton University’s School of Engineering and Applied Science are looking at how blockchain technology can provide secure financial transactions, among other applications. “Early on we realized this was a technology that was not well understood but that a lot of people were interested in,” says Ed Felten, the Robert E. Kahn Profess... » read more

Manufacturing Bits: Dec. 26


Polymer pen litho Using a polymer pen lithography technique, the Air Force Research Laboratory and Northwestern University have developed a quick way to discover new materials. Researchers have developed a combinatorial library of tiny nanoparticles on a substrate. A combinatorial library, sometimes referred to as a megalibrary, is a collection of different structures. Each structure is enc... » read more

System Bits: Dec. 26


Adding learning to computer vision UCLA’s Samueli School of Engineering and Stanford University are working on advanced computer vision technology, using artificial intelligence to help vision systems learn to identify faces, objects and other things on their own, without training by humans. The research team breaks up images into chunks they call “viewlets,” then they have the computer ... » read more

Power/Performance Bits: Dec. 26


2nm memristors Researchers at the University of Massachusetts Amherst and Brookhaven National Laboratory built memristor crossbar arrays with a 2nm feature size and a single-layer density up to 4.5 terabits per square inch. The team says the arrays were built with foundry-compatible fabrication technologies. "This work will lead to high-density memristor arrays with low power consumption fo... » read more

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