Promising Materials Beyond Silicon (TI, AIXTRON, imec)


A new technical paper titled "Future materials for beyond Si integrated circuits: a Perspective" was published by researchers at Texas Instruments, AIXTRON SE and imec. Abstract: "The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopte... » read more

Manipulating Diamond Surface Chemistry By UV Laser Etching (Macquarie Univ., MIT)


A new technical titled "The effects of sub-monolayer laser etching on the chemical and electrical properties of the (100) diamond surface" was published by researchers at Macquarie University and MIT. Abstract "Tailoring the surface chemistry of diamond is critical to a range of applications from quantum science to electronics. It has been recently shown that dosing the diamond surface with... » read more

Patterning Doping On Very Large Monolayer MoS2 (NREL)


A new technical paper titled "Spatially Precise Light-Activated Dedoping in Wafer-Scale MoS2 Films" was published by researchers at National Renewable Energy Laboratory (NREL) and Renewable & Sustainable Energy Institute (RASEI). "In this work, we unravel the mechanism that drives PL* changes of MoS2 monolayers under laser illumination in ambient conditions. We demonstrate the critical ... » read more

Monitor Etch Defects on Dies in the Outer Regions Of The Wafer Using ISR


A technical paper titled "Detection of defective chips from nanostructures with a high-aspect ratio using hyperspectral imaging and deep learning" was published by researchers at Samsung Electronics. Abstract: "We have developed an imaging spectroscopic reflectometry (ISR) method based on hyperspectral imaging and deep learning to detect defects in the bottom region of high-aspect-ratio nan... » read more

Schottky Barrier Transistors Roadmap (Univ. of Surrey, NaMLab, PGI et al.)


A new technical paper titled "Roadmap for Schottky Barrier Transistors" was published by researchers at University of Surrey, NaMLab gGmbH, Forschungszentrum Jülic, Peter Grünberg Institute, et al. Abstract: "In this roadmap we consider the status and challenges of technologies that use the properties of a rectifying metal-semiconductor interface, known as a Schottky barrier, as an asset ... » read more

Sustainable Hardware Specialization Through Reconfigurable Logic (NUS, Ghent Univ.)


A  new technical paper titled "Sustainable Hardware Specialization" was published by researchers at National University of Singapore and Ghent University. "We explore sustainable hardware specialization through reconfigurable logic that has the potential to drastically reduce the environmental footprint compared to a sea of accelerators by amortizing its embodied footprint across multiple a... » read more

High-Temperature Processing of Molybdenum Interconnects


A technical paper titled "Solving the Annealing of Mo Interconnects for Next-Gen Integrated Circuits" was published by researchers at the National University of Singapore, A*STAR, and imec. Abstract "Recent surge in demand for computational power combined with strict constraints on energy consumption requires persistent increase in the density of transistors and memory cells in integrated ... » read more

Recent Progress in Inorganic Metal-Oxide-Based Photoresists For EUVL


A technical paper titled "Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography" was published by researchers at University of South–Eastern Norway. Abstract: "Extreme ultraviolet lithography (EUVL) is a leading technology in semiconductor manufacturing, enabling the creation of high-resolution patterns essential for advanced microelectronics. This review highlights recent... » read more

Current and Emerging Heterogeneous Integration Technologies For High-Performance Systems (Georgia Tech)


A technical paper titled "Heterogeneous Integration Technologies for Artificial Intelligence Applications" was published by Georgia Tech. Abstract "The rapid advancement of artificial intelligence (AI) has been enabled by semiconductor-based electronics. However, the conventional methods of transistor scaling are not enough to meet the exponential demand for computing power driven by AI. ... » read more

Scalability of Nanosheet Oxide FETs for Monolithic 3-D Integration


A new technical paper titled "High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling" was published by researchers at The University of Tokyo and Nara Institute of Science and Technology. Abstract "We have investigated the scaling potential of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3-D (M3D) integration in t... » read more

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