Demonstrating The Feasibility Of The Foundry Model For Flexible Thin-Film Electronics 


A technical paper titled “Multi-project wafers for flexible thin-film electronics by independent foundries” was published by researchers at KU Leuven and imec. Abstract: "Flexible and large-area electronics rely on thin-film transistors (TFTs) to make displays, large-area image sensors, microprocessors, wearable healthcare patches, digital microfluidics and more. Although silicon-based co... » read more

Testing/Probing Single Electrons Across 300mm Spin Qubit Wafers (Intel)


A technical paper titled “Probing single electrons across 300-mm spin qubit wafers” was published by researchers at Intel Corporation. Abstract: "Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid-state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reac... » read more

Controllable Interaction Between Two Hole Spin Qubits In A Conventional Silicon Transistor


A technical paper titled “Anisotropic exchange interaction of two hole-spin qubits” was published by researchers at University of Basel and IBM Research Europe-Zurich. Abstract: "Semiconductor spin qubits offer the potential to employ industrial transistor technology to produce large-scale quantum computers. Silicon hole spin qubits benefit from fast all-electrical qubit control and sweet... » read more

Synthesis Of Goldene Comprising Single-Atom Layer Gold (Linköping University)


A technical paper titled “Synthesis of goldene comprising single-atom layer gold” was published by researchers at Linköping University (Sweden). Abstract: "The synthesis of monolayer gold has so far been limited to free-standing several-atoms-thick layers, or monolayers confined on or inside templates. Here we report the exfoliation of single-atom-thick gold achieved through wet-chemical... » read more

Metrology For 2D Materials: A Review From The International Roadmap For Devices And Systems (NIST, Et Al.)


A technical paper titled “Metrology for 2D materials: a perspective review from the international roadmap for devices and systems” was published by researchers at Arizona State University, IBM Research, Unity-SC, and the National Institute of Standards and Technology (NIST). Abstract: "The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into h... » read more

Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition (Penn State, et al.)


A new technical paper titled "In-Operando Spatiotemporal Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition" was published by researchers at Pennsylvania State University, Cornell University, Argonne National Lab, Georgia Tech and Forschungsverbund Berlin. Abstract "The drive toward non-von Neumann device architectures has led to an intense focus on ins... » read more

High-NA EUVL: Automated Defect Inspection Based on SEMI-SuperYOLO-NAS


A new technical paper titled "Towards Improved Semiconductor Defect Inspection for high-NA EUVL based on SEMI-SuperYOLO-NAS" was published by researchers at KU Leuven, imec, Ghent University, and SCREEN SPE. Abstract "Due to potential pitch reduction, the semiconductor industry is adopting High-NA EUVL technology. However, its low depth of focus presents challenges for High Volume Manufac... » read more

Using Palladium To Address Contact Issues Of Buried Oxide Thin Film Transistors


A new technical paper titled "Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway" was published by researchers at Tokyo Institute of Technology and National Institute for Materials Science (NIMS). Abstract "Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures... » read more

2D van der Waals Magnets Above Room Temperature (MIT)


A new technical paper titled "Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature" was published by researchers at MIT, with funding by the NSF and U.S. Department of Energy. Abstract "Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory an... » read more

High-Temp, High-Electron Mobility MOSFETs Based On N-Type Diamond


A new technical paper titled "High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond" was published by researchers at National Institute for Materials Science (Japan). Abstract: "Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of c... » read more

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