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International Roadmap for Devices and Systems lithography roadmap


Abstract: "Background: Planned improvements in semiconductor chip performance have historically driven improvements in lithography and this is expected to continue in the future. The International Roadmap for Devices and Systems roadmap helps the industry plan for the future. Aim: The 2021 lithography roadmap shows requirements, possible options, and challenges for the next 15 years. Resul... » read more

Making BaZrS3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy


Abstract: We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via tw... » read more

A graph placement methodology for fast chip design


Abstract "Chip floorplanning is the engineering task of designing the physical layout of a computer chip. Despite five decades of research1, chip floorplanning has defied automation, requiring months of intense effort by physical design engineers to produce manufacturable layouts. Here we present a deep reinforcement learning approach to chip floorplanning. In under six hours, our method autom... » read more

High-Voltage, High-Current Electrical Switching Discharge Synthesis of ZnO Nanorods: A New Method toward Rapid and Highly Tunable Synthesis of Oxide Semiconductors in Open Air and Water for Optoelectronic Applications


Abstract: "A novel method of oxide semiconductor nanoparticle synthesis is proposed based on high-voltage, high-current electrical switching discharge (HVHC-ESD). Through a subsecond discharge in the HVHC-ESD method, we successfully synthesized zinc oxide (ZnO) nanorods. Crystallography and optical and electrical analyses approve the high crystal-quality and outstanding optoelectronic charac... » read more

Sputtered transparent electrodes for optoelectronic devices: Induced damage and mitigation strategies


Abstract: Summary "Transparent electrodes and metal contacts deposited by magnetron sputtering find applications in numerous state-of-the-art optoelectronic devices, such as solar cells and light-emitting diodes. However, the deposition of such thin films may damage underlying sensitive device layers due to plasma emission and particle impact. Inserting a buffer layer to shield against such da... » read more

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content


Abstract "InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as well as for exploiting topological insulator behavior in III-nitride semiconductors. However, it had been argued that the highest indium content in such ultra-thin QWs is kinetically limited to a maximum of 33%, narro... » read more

Data-driven Scheduling for High-mix and Low-volume Production in Semiconductor Assembly and Testing


Abstract: The objective of this research is to improve scheduling decisions in high-mix low-volume (HMLV) production environments. Unique characteristics of HMLV semiconductor assembly and testing operations include: (1) Diversified Product Lines: To respond to global competition and different customer needs, manufacturers are providing diversified products to different consumers; (2) Unrelate... » read more

Roadmap on organic–inorganic hybrid perovskite semiconductors and devices


ABSTRACT Metal halide perovskites are the first solution processed semiconductors that can compete in their functionality with conventional semiconductors, such as silicon. Over the past several years, perovskite semiconductors have reported breakthroughs in various optoelectronic devices, such as solar cells, photodetectors, light emitting and memory devices, and so on. Until now, perovskit... » read more

Energy-efficient memcapacitor devices for neuromorphic computing


Abstract Data-intensive computing operations, such as training neural networks, are essential for applications in artificial intelligence but are energy intensive. One solution is to develop specialized hardware onto which neural networks can be directly mapped, and arrays of memristive devices can, for example, be trained to enable parallel multiply–accumulate operations. Here we show that ... » read more

Standards for the Characterization of Endurance in Resistive Switching Devices


Abstract "Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to... » read more

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