category: Manufacturing

category: IoT, Security & Automotive

FOWLP Warpage: Review Of Causes, Modeling And Methodologies For Controlling
By Technical Paper Link - 14 Feb, 2025 - Comments: 0

A new technical paper titled "Warpage in wafer-level packaging: a review of causes, modelling, and mitigation strategies" was published by researchers at Arizona State University. Abstract "Wafer-level packaging (WLP) is a pivotal semiconductor packaging technology that enables heterogeneously integrated advanced semiconductor packages with high-density electrical interconnections through i... » read more

Demonstration Of An ALD IWO Channel In A GAA Nanosheet FET Structure (Georgia Tech, Micron)
By Technical Paper Link - 14 Feb, 2025 - Comments: 0

A new technical paper titled "First Demonstration of High-Performance and Extremely Stable W-Doped In2O3  Gate-All-Around (GAA) Nanosheet FET" was published by researchers at Georgia Institute of Technology and Micron. Abstract "We demonstrate a gate-all-around (GAA) nanosheet FET featuring an atomic layer-deposited (ALD) tungsten (W)-doped indium oxide (In2O3), or indium tungsten oxide ... » read more

Simulation Study Of Vertically Stacked 2D NSFETs
By Technical Paper Link - 12 Feb, 2025 - Comments: 0

A new technical paper titled "Simulation of Vertically Stacked 2-D Nanosheet FETs" was published by researchers at Università di Pisa and TU Wien. Abstract "We present a simulation study of vertically stacked 2-D nanosheet field-effect transistors (NSFETs). The aim of this investigation is to assess the performance and potential of FinFET alternatives, i.e., gate-all-around (GAA) nanosheet... » read more

Optimization of Oxygen Plasma Conditions for Cu-Cu Bonding
By Technical Paper Link - 04 Feb, 2025 - Comments: 0

A new technical paper titled "Understanding and Optimizing Oxygen Plasma Treatment for Enhanced Cu-Cu Bonding Application" was published by researchers at Seoul National University of Science and Technology. Abstract "This study investigates the optimization of O2 plasma treatment conditions to enhance Cu-Cu bonding. The O2 plasma treatment conditions were optimized using Design of Experime... » read more

Indium Tungsten Oxide (IWO) Thin-Film Transistors
By Technical Paper Link - 04 Feb, 2025 - Comments: 0

A new technical paper titled "Thermally Dependent Metastability of Indium-Tungsten-Oxide Thin-Film Transistors" was published by researchers at Rochester Institute of Technology and Corning Research and Development Corporation. Abstract "Indium tungsten oxide (IWO) has been investigated as an oxide semiconductor candidate for next-generation thin-film transistors (TFTs). Bottom-gate TFTs we... » read more

Indium Nitrate As An Advanced Metal-Oxide Resist for EUV Lithography
By Technical Paper Link - 03 Feb, 2025 - Comments: 0

A new technical paper titled "Sensitivity and contrast of indium nitrate hydrate resist evaluated by low-energy electron beam and extreme ultraviolet exposure" was published by researchers at UT Dallas. "We evaluate the sensitivity and contrast of indium nitrate resists by analyzing dose curves collected using electron beam lithography (EBL) and extreme ultraviolet (EUV) exposure, " states t... » read more

Ultranarrow Semiconductor WS2 Nanoribbon FETs (Chalmers)
By Technical Paper Link - 29 Jan, 2025 - Comments: 0

A new technical paper titled "Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors" was published by researchers at Chalmers University of Technology. Abstract "Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancem... » read more

Controlling Speckle Contrast Using Existing Lithographic Scanner Knobs to Understand LWR (Samsung, ASML)
By Technical Paper Link - 29 Jan, 2025 - Comments: 0

A new technical paper titled "Controlling Speckle Contrast Using Existing Lithographic Scanner Knobs to Explore the Impact on Line Width Roughness" was published by researchers at Samsung, ASML and Sungkyunkwan University. Abstract "Local critical dimension uniformity (LCDU) or line width roughness (LWR) is increasingly important in argon fluoride (ArF) immersion lithography systems (scanne... » read more

3D Integration And Test Results From TSV-Processed Chips (CERN et al.)
By Technical Paper Link - 20 Jan, 2025 - Comments: 0

A new technical paper titled "3D integration of pixel readout chips using Through-Silicon-Vias" was published by researchers at CERN, IZM Fraunhofer and University of Geneva. Abstract "Particle tracking and imaging detectors are becoming increasingly complex, driven by demands for densely integrated functionality and maximal sensitive area. These challenging requirements can be met using 3D... » read more

Schottky Barrier Transistors: Status, Challenges and Modeling Tools
By Technical Paper Link - 08 Jan, 2025 - Comments: 0

A technical paper titled "Roadmap for Schottky barrier transistors" was published by researchers at University of Surrey, Namlab gGmbH, Forschungszentrum Jülich (FZJ), et al. Abstract "In this roadmap we consider the status and challenges of technologies that use the properties of a rectifying metal-semiconductor interface, known as a Schottky barrier (SB), as an asset for device functio... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2025 SMG   |  Terms of Service  |  Privacy Policy