category: Manufacturing

category: IoT, Security & Automotive

MBIST-supported Trim Adjustment to Compensate Thermal Behavior of MRAM
By Technical Paper Link - 03 Sep, 2021 - Comments: 0

Abstract: "Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is one of the most promising candidates to replace conventional embedded memory such as Static RAM and Dynamic RAM. However, due to the small on/off ratio of MRAM cells, process variations may reduce the operating margin of a chip. Reference trimming was suggested as one of the ways to reduce variation impact to the chi... » read more

Intermittent Undefined State Fault in RRAMs
By Technical Paper Link - 03 Sep, 2021 - Comments: 1

Abstract: " Industry is prototyping and commercializing Resistive Random Access Memories (RRAMs). Unfortunately, RRAM devices introduce new defects and faults. Hence, high-quality test solutions are urgently needed. Based on silicon measurements, this paper identifies a new RRAM unique fault, the Intermittent Undefined State Fault (IUSF); this fault causes the RRAM device to intermittently c... » read more

Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs
By Technical Paper Link - 28 Aug, 2021 - Comments: 0

  Abstract "Mechanical stress is demonstrated in the fabrication process of nanosheet FETs. In particular, unwanted mechanical instability stemming from gravity during channel-release is covered in detail by aid of 3-D simulations. The simulation results show the physical weakness of suspended nanosheets and the impact of nanosheet thickness. Inner spacer engineering based on geometr... » read more

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
By Technical Paper Link - 28 Aug, 2021 - Comments: 0

Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel). 2021 Jun 28;11(7):1689. doi: 10.3390/nano11071689. PMID: 34203194; PMCID: PMC8307669. Find technical paper here. Abstract "In this paper, to solve the epitaxial thickness limit and the high in... » read more

Variational Quantum Algorithms (VQA)
By Technical Paper Link - 27 Aug, 2021 - Comments: 0

  Abstract "Applications such as simulating large quantum systems or solving large-scale linear algebra problems are immensely challenging for classical computers due their extremely high computational cost. Quantum computers promise to unlock these applications, although fault-tolerant quantum computers will likely not be available for several years. Currently available quantum device... » read more

Chiplet-Based Advanced Packaging Technology from 3D/TSV to FOWLP/FHE
By Technical Paper Link - 27 Aug, 2021 - Comments: 0

T. Fukushima, "Chiplet-Based Advanced Packaging Technology from 3D/TSV to FOWLP/FHE," 2021 Symposium on VLSI Circuits, 2021, pp. 1-2, doi: 10.23919/VLSICircuits52068.2021.9492335. Abstract: "More recently, "chiplets" are expected for further scaling the performance of LSI systems. However, system integration with the chiplets is not a new methodology. The basic concept dates back well over ... » read more

Plasma processing for advanced microelectronics beyond CMOS
By Technical Paper Link - 27 Aug, 2021 - Comments: 0

N. Marchack, L. Buzi, D. B. Farmer, H. Miyazoe, J. M. Papalia, H. Yan, G. Totir, and S. U. Engelmann , "Plasma processing for advanced microelectronics beyond CMOS", Journal of Applied Physics 130, 080901 (2021) https://doi.org/10.1063/5.0053666 ABSTRACT "The scientific study of plasma discharges and their material interactions has been crucial to the development of semiconductor process en... » read more

High-performance flexible nanoscale transistors based on transition metal dichalcogenides
By Technical Paper Link - 24 Aug, 2021 - Comments: 0

Read the paper here. Published June 17, 2021, Nature Electronics. Abstract Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths on the micrometre scale, not benefitting from the short-channel advan... » read more

Marangoni Effect-Based Under-Layer For A Dual Damascene Via-First Approach
By Brewer Science - 19 Aug, 2021 - Comments: 0

One of the main challenges of a Dual Damascene (DD) via-first process is the control of the Critical Dimensions (CDs) in the lithography of the trenches. The PhotoResist (PhR) thickness presents variations from the via arrays to the open areas, which cause the variation of CDs: the swing effect. The planarization of a DD via-first process is reported. A dual-layer solution is used to demonst... » read more

Intelligent Agents for the Optimization of Atomic Layer Deposition
By Technical Paper Link - 05 Aug, 2021 - Comments: 0

"Atomic layer deposition (ALD) is a highly controllable thin film synthesis approach with applications in computing, energy, and separations. The flexibility of ALD means that it can access a massive chemical catalogue; however, this chemical and process diversity results in significant challenges in determining processing parameters that result in stable and uniform film growth with minimal pr... » read more

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