Promising Materials Beyond Silicon (TI, AIXTRON, imec)


A new technical paper titled "Future materials for beyond Si integrated circuits: a Perspective" was published by researchers at Texas Instruments, AIXTRON SE and imec. Abstract: "The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopte... » read more

Manipulating Diamond Surface Chemistry By UV Laser Etching (Macquarie Univ., MIT)


A new technical titled "The effects of sub-monolayer laser etching on the chemical and electrical properties of the (100) diamond surface" was published by researchers at Macquarie University and MIT. Abstract "Tailoring the surface chemistry of diamond is critical to a range of applications from quantum science to electronics. It has been recently shown that dosing the diamond surface with... » read more

Patterning Doping On Very Large Monolayer MoS2 (NREL)


A new technical paper titled "Spatially Precise Light-Activated Dedoping in Wafer-Scale MoS2 Films" was published by researchers at National Renewable Energy Laboratory (NREL) and Renewable & Sustainable Energy Institute (RASEI). "In this work, we unravel the mechanism that drives PL* changes of MoS2 monolayers under laser illumination in ambient conditions. We demonstrate the critical ... » read more

Schottky Barrier Transistors Roadmap (Univ. of Surrey, NaMLab, PGI et al.)


A new technical paper titled "Roadmap for Schottky Barrier Transistors" was published by researchers at University of Surrey, NaMLab gGmbH, Forschungszentrum Jülic, Peter Grünberg Institute, et al. Abstract: "In this roadmap we consider the status and challenges of technologies that use the properties of a rectifying metal-semiconductor interface, known as a Schottky barrier, as an asset ... » read more

Ge-Based Multigate SBFETs Operated In An NDR Mode (TU Wien, JKU)


A new technical paper titled "Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors" was published by researchers at TU Wien and JKU (Johannes Kepler University). Abstract: "The co-integration of negative differential resistance (NDR) and Si-based CMOS technology might be a promising concept for multimode devices and circuits with enhanced performance... » read more

Analysis And Design Of Dual-Layer TFTs (Oregon State Univ., Applied Materials)


A new technical paper titled "Dual-Layer Thin-Film Transistor Analysis and Design" was published by researchers at Oregon State University and Applied Materials. Abstract "A set of analytical equations is formulated for the analysis and design of a dual-layer thin-film transistor (TFT). For a given TFT structure, in which each channel layer thickness is specified, drain current is calculate... » read more

High-Temperature Processing of Molybdenum Interconnects


A technical paper titled "Solving the Annealing of Mo Interconnects for Next-Gen Integrated Circuits" was published by researchers at the National University of Singapore, A*STAR, and imec. Abstract "Recent surge in demand for computational power combined with strict constraints on energy consumption requires persistent increase in the density of transistors and memory cells in integrated ... » read more

New Class Of Materials With Increased Band Gap (U. of Minnesota, Caltech)


A new technical paper titled "Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design" was published by researchers at University of Minnesota–Twin Cities and Caltech. The researchers "looked at creating a new class of materials with increased “band gap,” enhancing both transparency and conductivity. The new material is a transparent conducting oxide, created with a s... » read more

Visualization of Photoexcited Charges Moving Across the Interface of Si/Ge


A technical paper titled "Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy" was published by researchers at UC Santa Barbara and UCLA. "In this work, we apply scanning ultrafast electron microscopy to provide a holistic view of photoexcited charge dynamics in a Si/Ge heterojunction. We find that the built-in potential and the band off... » read more

Energy Storage: Properties of Barium Titanate (Harvey Mudd)


A technical paper titled "Understanding surfaces and interfaces in nanocomposites of silicone and barium titanate through experiments and modeling" was published by researchers at Harvey Mudd College, Sandia National Lab and Air Force Research Laboratory. Abstract "Barium titanate (BTO) is a ferroelectric perovskite used in electronics and energy storage systems because of its high dielectr... » read more

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