PCM-Based IMC Technology: Overview Of Materials, Device Physics, Design and Fabrication (IBM Research-Europe)


A new technical paper titled "Phase-Change Memory for In-Memory Computing" was published by researchers at IBM Research-Europe. "We review the current state of phase-change materials, PCM device physics, and the design and fabrication of PCM-based IMC chips. We also provide an overview of the application landscape and offer insights into future developments," states the paper. Find the te... » read more

Vertically Stacked ZnO/Te CFETs (POSTECH, Mokpo)


A new technical paper titled "Demonstration of Vertically Stacked ZnO/Te Complementary Field-Effect Transistor" was published by researchers at POSTECH and Mokpo National University. Abstract "The complementary field-effect transistor (CFET) structure is a highly area-efficient technology. However, their fabrication entails highly complex integration processes using wafer transfer or recr... » read more

Integration of High-Density Polymer Waveguides With Silicon Photonics for CPO (imec, Ghent)


A technical paper titled "Low-Loss Integration of High-Density Polymer Waveguides with Silicon Photonics for Co-Packaged Optics" was published by researchers at imec and Ghent University. Abstract "Co-Packaged Optics applications require scalable and high-yield optical interfacing solutions to silicon photonic chiplets, offering low-loss, broadband, and polarization-independent optical coup... » read more

Quantifying The PFAS Impact In ICs Manufacturing (Harvard University)


A new technical paper titled "Modeling PFAS in Semiconductor Manufacturing to Quantify Trade-offs in Energy Efficiency and Environmental Impact of Computing Systems" was published by researchers at Harvard University and Mohamed Bin Zayed University of AI (MBZUAI). "The electronics and semiconductor industry is a prominent consumer of per- and poly-fluoroalkyl substances (PFAS), also known a... » read more

Electrical Properties of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts (NYCU)


A new technical paper titled "Electrical Characteristics of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts" was published by researchers at National Yang Ming Chiao Tung University. Abstract "This paper reports source/drain (S/D) contact issues in monolayer and bilayer (BL) MoS2 devices through density-functional-theory (DFT) calculation and device simulation. We begin by ana... » read more

Role of Josephson Junctions In Propelling Quantum Technologies Forward (LBNL, UC Berkeley, et al.)


A new technical paper titled "Josephson Junctions in the Age of Quantum Discovery" was published by researchers at Lawrence Berkeley National Laboratory, UC Berkeley, Gwangju Institute of Science and Technology, Korea University, Max Planck and Anyon Computing. Abstract "The unique combination of energy conservation and nonlinear behavior exhibited by Josephson junctions has driven transfor... » read more

Doping Mechanism Of Pure Nitric Oxide In Tungsten Diselenide Transistors (Purdue, MIT, NYCU)


A technical paper titled "Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors" was published by researchers at Purdue University, MIT and National Yang Ming Chiao Tung University (with support from Intel Corporation). "Atomically thin two-dimensional (2D) semiconductors are promising candidates for beyond-silicon electronic devices. However, an excessi... » read more

Optimization Approach For The Dispensing of Thermal Interface Material (KIT, Robert Bosch)


A new technical paper titled "TIMtrace: Coverage Path Planning for Thermal Interface Materials" was published by researchers at Karlsruhe Institute of Technology (KIT) and Robert Bosch GmbH. Abstract "Thermal Interface Materials are used to transfer heat from a semiconductor to a heatsink. They are applied along a dispense path onto the semiconductor and spread over its entire surface once ... » read more

Novel Thin Film Growth Technique Of A WBG Sulfide Semiconductor in BEOL Compatible Conditions (USC, LBNL, TSMC)


A new technical paper titled "Textured growth and electrical characterization of Zinc Sulfide on back-end-of-the-line (BEOL) compatible substrates" was published by researchers at USC, Lawrence Berkeley National Laboratory and TSMC. Abstract "Scaling of transistors has enabled continuous improvements in logic device performance, especially through materials engineering. However, surpassing ... » read more

Main Applications And Corresponding Requirements For IMC With RRAM Devices


A new technical paper titled "Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing" was published by researchers at Politecnico di Milano, IUNET and Hewlett-Packard Labs. Abstract "In the information age, novel hardware solutions are urgently needed to efficiently store and process increasing amounts of data. In this scenario, memory device... » read more

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