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Wafer Scale Transfer of 2D Materials, Graphene


A new technical paper titled "Assessment of Wafer-Level Transfer Techniques of Graphene with Respect to Semiconductor Industry Requirements" was published by researchers at Infineon Technologies AG, RWTH Aachen University, Protemics, and Advantest. Abstract "Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requ... » read more

Technique For Printing Electronic Circuits Onto Curved & Corrugated Surfaces Using Metal Nanowires (NC State)


A technical paper titled "Curvilinear soft electronics by micromolding of metal nanowires in capillaries" was published by researchers at North Carolina State University. “We’ve developed a technique that doesn’t require binding agents and that allows us to print on a variety of curvilinear surfaces,” says Yuxuan Liu, first author of the paper and a Ph.D. student at NC State in this ... » read more

New Technique For Making Thin Films of Perovskite Oxide Semiconductors


A technical paper titled "Freestanding epitaxial SrTiO3  nanomembranes via remote epitaxy using hybrid molecular beam epitaxy" was published by researchers at University of Minnesota Twin Cities, Pacific Northwest National Laboratory, and University of Wisconsin–Madison. The researchers developed a new technique for making thin films of perovskite oxide semiconductors.  The development c... » read more

Graphene-Based Electronics (Georgia Tech)


A technical paper titled "An epitaxial graphene platform for zero-energy edge state nanoelectronics" was published by researchers at Georgia Tech, Tianjin University, CNRS, Synchrotron SOLEIL, National High Magnetic Field Laboratory and others. “Graphene’s power lies in its flat, two-dimensional structure that is held together by the strongest chemical bonds known,” said Walter de Heer... » read more

MOVPE Grown (100) Beta-Gallium Oxide Layers for Power Electronics Application


A technical paper titled "Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application" was published by researchers at Leibniz-Institut für Kristallzüchtung (IKZ), Germany. "Beta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency ele... » read more

Scalable Technique Producing Thin Lightweight Solar Cells That Turn Any Surface Into A Power Source (MIT)


A new technical paper titled "Printed Organic Photovoltaic Modules on Transferable Ultra-thin Substrates as Additive Power Sources" was published by researchers at MIT. "These durable, flexible solar cells, which are much thinner than a human hair, are glued to a strong, lightweight fabric, making them easy to install on a fixed surface. They can provide energy on the go as a wearable power ... » read more

Graphene Devices: Suppressing Vibrations By Adding Vibrations (FLEET)


A technical paper titled "Passivating Graphene and Suppressing Interfacial Phonon Scattering with Mechanically Transferred Large-Area Ga2O3" was published by researchers at ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University and University of Melbourne. According to FLEET's news article, the research found: -Ultra-thin, liquid-metal-printed oxid... » read more

2D-Materials-Based Electronic Circuits (KAUST and TSMC)


A special edition article titled "Electronic Circuits made of 2D Materials" was just published by Dr. Mario Lanza, KAUST Associate Professor of Material Science and Engineering, and Iuliana Radu, corporate researcher at TSMC. This special issue covers 21 articles from leading subject matter experts, ranging from materials synthesis and their integration in micro/nano-electronic devices and c... » read more

Rubbery Schottky Diodes Based on Soft, Stretchy Electronic Materials (Penn State)


A new technical paper titled "Fully rubbery Schottky diode and integrated devices" was published by researchers at Penn State University. The Office of Naval Research and the National Science Foundation funded this research. "Here, we report a fully rubbery Schottky diode constructed all based on stretchable electronic materials, including a liquid metal cathode, a rubbery semiconductor, and... » read more

Fabricating FeFET Devices with Silicon-Doped Hafnium Oxide As A Ferroelectric Layer


A new technical paper titled "Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications" was published by researchers at Fraunhofer IPMS, GlobalFoundries, and TU Bergakademie Freiberg. Abstract (partial) "This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric... » read more

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