Electronic Noise in vdW Layered AFMS (UCLA)


A technical paper titled “Electronic Noise Spectroscopy of Quasi-2D van der Waals Antiferromagnetic Semiconductors” was published by researchers at University of California Los Angeles. Abstract: "We investigated low-frequency current fluctuations, i.e. electronic noise, in FePS3 van der Waals, layered antiferromagnetic semiconductor. The noise measurements have been used as noise spectro... » read more

Directly Writing and Rewriting Photonic Chips on Low-Loss Phase-Change Thin Films


A technical paper titled “Freeform direct-write and rewritable photonic integrated circuits in phase-change thin films” was published by researchers at University of Washington, University of Maryland, and Tianjin University. Abstract: "Photonic integrated circuits (PICs) with rapid prototyping and reprogramming capabilities promise revolutionary impacts on a plethora of photonic technolo... » read more

New Metasurface Architecture To Deliver Ultrafast Information Processing And Versatile Terahertz Sources


A technical paper titled “Light-driven nanoscale vectorial currents” was published by researchers at Los Alamos National Laboratory, Menlo Systems, University of California Davis, Columbia University, Sandia National Laboratories, and Intellectual Ventures. Abstract: "Controlled charge flows are fundamental to many areas of science and technology, serving as carriers of energy and informa... » read more

Metal Films On 2D Materials: vdW Contacts And Raman Enhancement (University of Cambridge)


A technical paper titled “Metal Films on Two-Dimensional Materials: van der Waals Contacts and Raman Enhancement” was published by researchers at University of Cambridge. Abstract: "Electronic devices based on two-dimensional (2D) materials will need ultraclean and defect-free van der Waals (vdW) contacts with three-dimensional (3D) metals. It is therefore important to understand how vdW ... » read more

A Method To Transform Everyday Materials Into Conductors For Use In Quantum Computers


A technical paper titled “Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe5” was published by researchers at University of California Irvine, Los Alamos National Laboratory, and University of Tennessee. Abstract: "The fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices. Howe... » read more

Guidelines For A Single-Nanometer Magnetic Tunnel Junction (MTJ)


A technical paper titled “Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities” was published by researchers at Tohoku University, Université de Lorraine, and Inamori Research Institute for Science. Abstract: "Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements is critical for future electronics with spin-... » read more

Hacking DNA To Make 3D Nanostructures


A technical paper titled “Three-dimensional nanoscale metal, metal oxide, and semiconductor frameworks through DNA-programmable assembly and templating” was published by researchers at Brookhaven National Laboratory, Columbia University, and Stony Brook University. Abstract: "Controlling the three-dimensional (3D) nanoarchitecture of inorganic materials is imperative for enabling their no... » read more

A New Phase-Change Memory For Processing Large Amounts Of Data 


A technical paper titled “Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory” was published by researchers at Stanford University, TSMC, NIST, University of Maryland, Theiss Research and Tianjin University. Abstract: "Data-centric applications are pushing the limits of energy-efficiency in today’s computing systems, including those based on... » read more

Heterogeneous Integration of Graphene and Hafnium Oxide Memristors Using Pulsed-Laser Deposition


A technical paper titled “Heterogeneous Integration of Graphene and HfO2 Memristors” was published by researchers at Forschungszentrum Jülich, Jožef Stefan Institute, and Jülich-Aachen Research Alliance (JARA-FIT). Abstract: "The past decade has seen a growing trend toward utilizing (quasi) van der Waals growth for the heterogeneous integration of various materials for advanced electro... » read more

Properties Of The State-Of-The-Art Commercially Available SiC and GaN Power Transistors


A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. Abstract: "We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Materi... » read more

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