category: Materials

category: IoT, Security & Automotive

Large-Scale VFETs With Ultra-Short Channel Length And High Performance
By Technical Paper Link - 04 Sep, 2024 - Comments: 0

A new technical paper titled "Large-scale sub-5-nm vertical transistors by van der Waals integration" was published by researchers at Hunan University. "Here, we demonstrate a layer-by-layer transfer process of large-scale indium gallium zinc oxide (IGZO) semiconductor arrays and metal electrodes, and realize large-scale VFETs with ultra-short channel length and high device performance," sta... » read more

Benefits Of The Ultra-Low Leakage Currents from IGZO TFTs For Neuromorphic Applications
By Technical Paper Link - 27 Aug, 2024 - Comments: 0

A new technical paper titled "A tunable multi-timescale Indium-Gallium-Zinc-Oxide thin-film transistor neuron towards hybrid solutions for spiking neuromorphic applications" was published by researchers at imec, CSIC Universidad de Sevilla, and Sungkyunkwan University. Abstract "Spiking neural network algorithms require fine-tuned neuromorphic hardware to increase their effectiveness. Such ... » read more

Buried Si/SiGe Interfaces Investigated Using Soft X-Ray Reflectometry and STEM-EDX
By Technical Paper Link - 27 Aug, 2024 - Comments: 0

A new technical paper titled "Interface sharpness in stacked thin film structures: a comparison of soft X-ray reflectometry and transmission electron microscopy" was published by researchers at Physikalisch-Technische Bundesanstalt (PTB), imec, and Thermo Fisher Scientific Inc. The paper states: "A key element of semiconductor fabrication is the precise deposition of thin films. Among other... » read more

Potential Of 2D Semi-Metallic PtSe2 As Source/Drain Contacts For 2D Material FETs
By Technical Paper Link - 13 Aug, 2024 - Comments: 0

A technical paper titled “Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts” was published by researchers at Yonsei University, Korea Advanced Institute of Science and Technology (KAIST), Lincoln University College, Korea Institute of Science and Technology (KIST), and Ewha Womans University. Abstract: "In this ... » read more

Dual Graphite-Gated BLG As Platform for Cryogenic FETs
By Technical Paper Link - 13 Aug, 2024 - Comments: 0

A technical paper titled “Ultra-steep slope cryogenic FETs based on bilayer graphene” was published by researchers at RWTH Aachen University, Forschungszentrum Julich, National Institute for Materials Science (Japan), and AMO GmbH. "Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slop... » read more

Ultrafast Charge Transfer Cascade In Semiconductor Materials
By Technical Paper Link - 27 Jul, 2024 - Comments: 0

A technical paper titled “Ultrafast Charge Transfer Cascade in a Mixed-Dimensionality Nanoscale Trilayer” was published by researchers at the National Renewable Energy Laboratory. Abstract: "Innovation in optoelectronic semiconductor devices is driven by a fundamental understanding of how to move charges and/or excitons (electron-hole pairs) in specified directions for doing useful work, ... » read more

SiC Power Electronics Packaging: Floating Die Structure and Liquid Metal Fluidic Connection (Cambridge U. )
By Technical Paper Link - 17 Jul, 2024 - Comments: 0

A new technical paper titled "Liquid Metal Fluidic Connection and Floating Die Structure for Ultralow Thermomechanical Stress of SiC Power Electronics Packaging" was published by researchers at Cambridge University. Abstract "Coefficients of thermal expansion (CTE) of various materials in packaging structure layers vary largely, causing significant thermomechanical stress in power electroni... » read more

Excitonic Phenomena in TMDs (Harvard, Google, Stanford et al.)
By Technical Paper Link - 17 Jul, 2024 - Comments: 0

A new technical paper titled "Dynamical Control of Excitons in Atomically Thin Semiconductors" was published by researchers at Harvard University, Google Research, Stanford University, UC Riverside and others. Abstract "Excitons in transition metal dichalcogenides (TMDs) have emerged as a promising platform for novel applications ranging from optoelectronic devices to quantum optics and sol... » read more

Monolithic 3D TFT Integration at Room Temperature, Used to Stack 10 Vertical Layers
By Technical Paper Link - 12 Jul, 2024 - Comments: 0

A new technical paper titled "Three-dimensional integrated metal-oxide transistors" was published by researchers at KAUST (King Abdullah University of Science and Technology). Abstract "The monolithic three-dimensional vertical integration of thin-film transistor (TFT) technologies could be used to create high-density, energy-efficient and low-cost integrated circuits. However, the develo... » read more

Programmable Quantum Emitter Formation In Si (Lawrence Berkeley National Lab., UC Berkeley)
By Technical Paper Link - 08 Jul, 2024 - Comments: 0

A technical paper titled “Programmable quantum emitter formation in silicon” was published by researchers at Lawrence Berkeley National Laboratory and University of California Berkeley. Abstract: "Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence t... » read more

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