A new technical paper titled “Interface sharpness in stacked thin film structures: a comparison of soft X-ray reflectometry and transmission electron microscopy” was published by researchers at Physikalisch-Technische Bundesanstalt (PTB), imec, and Thermo Fisher Scientific Inc.
The paper states:
“A key element of semiconductor fabrication is the precise deposition of thin films. Among other aspects, the quality of interfaces between different materials plays a crucial role for the success of further processing steps.
We here present a combined quantitative study of soft X-ray reflectometry measurements compared to scanning transmission electron microscopy and energy dispersive X-ray spectroscopy (STEM-EDX) on stacked thin film samples of silicon and silicon-germanium (SiGe).”
Find the technical paper here. Published August 2024.
Ciesielski, Richard, Janusz Bogdanowicz, Roger Loo, Yosuke Shimura, Antonio Mani, Christoph Mitterbauer, Michael Kolbe, and Victor Soltwisch. “Interface sharpness in stacked thin film structures: a comparison of soft X-ray reflectometry and transmission electron microscopy.” Journal of Micro/Nanopatterning, Materials, and Metrology 23, no. 4 (2024): 041405-041405.
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