tag: thin films

Research Bits: Dec. 3
By Jesse Allen - 03 Dec, 2024 - Comments: 0

Self-assembly of mixed-metal oxide arrays Researchers from North Carolina State University and Iowa State University demonstrated a technique for self-assembling electronic devices. The proof-of-concept work was used to create diodes and transistors with high yield and could be used for more complex electronic devices. “Our self-assembling approach is significantly faster and less expensi... » read more

Physics-Based Efficient Device Model for Fe-TFTs (Univ. of Florida)
By Technical Paper Link - 17 Oct, 2024 - Comments: 0

A new technical paper titled "An efficient device model for ferroelectric thin-film transistors" was published by researchers at University of Florida. Abstract "Ferroelectric thin-film transistors (Fe-TFTs) have promising potential for flexible electronics, memory, and neuromorphic computing applications. Here, we report on a physics-based efficient device model for Fe-TFTs that effectivel... » read more

Research Bits: Sept. 17
By Jesse Allen - 17 Sep, 2024 - Comments: 0

DNA data storage plus compute Researchers from North Carolina State University and Johns Hopkins University created a DNA-based device that can perform both data storage and computing functions. “Specifically, we have created polymer structures that we call dendricolloids – they start at the microscale, but branch off from each other in a hierarchical way to create a network of nanoscal... » read more

Buried Si/SiGe Interfaces Investigated Using Soft X-Ray Reflectometry and STEM-EDX
By Technical Paper Link - 27 Aug, 2024 - Comments: 0

A new technical paper titled "Interface sharpness in stacked thin film structures: a comparison of soft X-ray reflectometry and transmission electron microscopy" was published by researchers at Physikalisch-Technische Bundesanstalt (PTB), imec, and Thermo Fisher Scientific Inc. The paper states: "A key element of semiconductor fabrication is the precise deposition of thin films. Among other... » read more

Performing Multiple, Simultaneous Depositions In A High-Throughput, Multiplexing ALD/MLD-Style Reactor
By Technical Paper Link - 22 Feb, 2024 - Comments: 0

A technical paper titled “High throughput multiplexing reactor design for rapid screening of atomic/molecular layer deposition processes” was published by researchers at University of Washington. Abstract: "An approach is demonstrated for performing multiple, simultaneous depositions in a high-throughput, multiplexing atomic layer deposition/molecular layer deposition (ALD/MLD)-style reac... » read more

Directly Writing and Rewriting Photonic Chips on Low-Loss Phase-Change Thin Films
By Technical Paper Link - 15 Feb, 2024 - Comments: 0

A technical paper titled “Freeform direct-write and rewritable photonic integrated circuits in phase-change thin films” was published by researchers at University of Washington, University of Maryland, and Tianjin University. Abstract: "Photonic integrated circuits (PICs) with rapid prototyping and reprogramming capabilities promise revolutionary impacts on a plethora of photonic technolo... » read more

Demonstrating The Strong Superconducting Diode Effect In Conventional SC Thin films
By Technical Paper Link - 01 Aug, 2023 - Comments: 0

A technical paper titled “Ubiquitous Superconducting Diode Effect in Superconductor Thin Films” was published by researchers at Massachusetts Institute of Technology (MIT), IBM Research Europe, U.S. Army DEVCOM Army Research Laboratory, Centro de Física de Materiales (CFM-MPC), Hanford High School, Vestavia Hills High School, Donostia International Physics Center (DIPC), Condensed Matter ... » read more

Surface-Activated ALD For Room-Temperature Bonding of Al2O3
By Technical Paper Link - 03 Apr, 2023 - Comments: 0

A new technical paper titled "Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition" was published by researchers at Kyushu University. Abstract "In this study, room-temperature wafer bonding of Al2O3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) metho... » read more

MOVPE Grown (100) Beta-Gallium Oxide Layers for Power Electronics Application
By Technical Paper Link - 20 Dec, 2022 - Comments: 0

A technical paper titled "Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application" was published by researchers at Leibniz-Institut für Kristallzüchtung (IKZ), Germany. "Beta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency ele... » read more

Research Bits: Oct. 4
By Jesse Allen - 04 Oct, 2022 - Comments: 0

2D electrode for ultra-thin semiconductors Researchers from the Korea Institute of Science and Technology (KIST), Japan's National Institute for Materials Science, and Kunsan National University designed two-dimensional semiconductor-based electronic and logic devices, with electrical properties that can be selectively controlled through a new 2D electrode material, chlorine-doped tin diseleni... » read more

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