Performing Multiple, Simultaneous Depositions In A High-Throughput, Multiplexing ALD/MLD-Style Reactor

A technical paper titled “High throughput multiplexing reactor design for rapid screening of atomic/molecular layer deposition processes” was published by researchers at University of Washington. Abstract: "An approach is demonstrated for performing multiple, simultaneous depositions in a high-throughput, multiplexing atomic layer deposition/molecular layer deposition (ALD/MLD)-style reac... » read more

Directly Writing and Rewriting Photonic Chips on Low-Loss Phase-Change Thin Films

A technical paper titled “Freeform direct-write and rewritable photonic integrated circuits in phase-change thin films” was published by researchers at University of Washington, University of Maryland, and Tianjin University. Abstract: "Photonic integrated circuits (PICs) with rapid prototyping and reprogramming capabilities promise revolutionary impacts on a plethora of photonic technolo... » read more

Demonstrating The Strong Superconducting Diode Effect In Conventional SC Thin films

A technical paper titled “Ubiquitous Superconducting Diode Effect in Superconductor Thin Films” was published by researchers at Massachusetts Institute of Technology (MIT), IBM Research Europe, U.S. Army DEVCOM Army Research Laboratory, Centro de Física de Materiales (CFM-MPC), Hanford High School, Vestavia Hills High School, Donostia International Physics Center (DIPC), Condensed Matter ... » read more

Surface-Activated ALD For Room-Temperature Bonding of Al2O3

A new technical paper titled "Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition" was published by researchers at Kyushu University. Abstract "In this study, room-temperature wafer bonding of Al2O3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) metho... » read more

MOVPE Grown (100) Beta-Gallium Oxide Layers for Power Electronics Application

A technical paper titled "Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application" was published by researchers at Leibniz-Institut für Kristallzüchtung (IKZ), Germany. "Beta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency ele... » read more

Research Bits: Oct. 4

2D electrode for ultra-thin semiconductors Researchers from the Korea Institute of Science and Technology (KIST), Japan's National Institute for Materials Science, and Kunsan National University designed two-dimensional semiconductor-based electronic and logic devices, with electrical properties that can be selectively controlled through a new 2D electrode material, chlorine-doped tin diseleni... » read more

Film Failure in Multilayer Systems for Semiconductor Devices

Researchers at MIT, Yonsei University (Seoul, Korea) just published this technical paper titled "Interfacial Delamination at Multilayer Thin Films in Semiconductor Devices." According to the abstract "In this work, the effect of thermomechanical stress on the failure of multilayered thin films on Si substrates was studied using analytical calculations and various thermomechanical tests." ... » read more

Highly efficient modulation doping: A path toward superior organic thermoelectric devices

New academic paper from TU Dresden. Abstract "We investigate the charge and thermoelectric transport in modulation-doped large-area rubrene thin-film crystals with different crystal phases. We show that modulation doping allows achieving superior doping efficiencies even for high doping densities, when conventional bulk doping runs into the reserve regime. Modulation-doped orthorhombic rubr... » read more

Flat-surface-assisted and self-regulated oxidation resistance of Cu(111)

Abstract "Oxidation can deteriorate the properties of copper that are critical for its use, particularly in the semiconductor industry and electro-optics applications. This has prompted numerous studies exploring copper oxidation and possible passivation strategies. In situ observations have, for example, shown that oxidation involves stepped surfaces: Cu2O growth occurs on flat surfaces as a ... » read more

Making BaZrS3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy

Abstract: We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via tw... » read more

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