Reflectometry-Based Technique for Characterising Complex Thin-Film Structures (Aalto U. et al.)


A new technical paper, "Characterisation of Complex Multilayer Nanostructures with High Aspect Ratio," was recent published by researchers at Aalto University, University of Eastern Finland, Chipmetrics OY, and VTT MIKES. Abstract "Deposition studies of deep vertical dips on semiconductor wafers can create problems at an industrial manufacturing scale, since cross-sectioning requires a lo... » read more

Three New ALD/MLD Processes for Co-organic Thin Films (Aalto University, RUB et al.)


A new technical paper, "Amido-Amine Co(II) Precursor-Based Atomic/Molecular Layer Deposition Processes for Cobalt-Organic Thin Films and Their Thermal Conversion to CoO Thin Films," was published by researchers at Aalto University, Ruhr University Bochum, Tyndall National Institute, ESRF et al. "Atomic/molecular layer deposition (ALD/MLD) offers a comprehensive process and application portfo... » read more

Role of Elastomer Structure in Blending Strategy for Stretchable Semiconducting Thin Films (CAS, RIKEN)


A new technical report titled "Polymer semiconductor blends with remarkably stable semiconducting performance under large and cyclic mechanical deformation" was published by Chinese Academy of Sciences (CAS) and RIKEN Center for Sustainable Resource Science. The paper states: "We report deformable blend thin films of polymer semiconductors with PDPPTT (p-type) and N2200 (n-type) as the ex... » read more

Mitigating Structural Defects During The Growth Of 2D vdW Chalcogenides By MBE (Penn State Univ.)


A new technical paper titled "Mitigation of Structural Defects during the Growth of 2D van der Waals Chalcogenides by Molecular Beam Epitaxy" was published by researchers at Penn State University. Abstract "The growth of wafer-scale van der Waals (vdW) thin films and heterostructures by molecular beam epitaxy (MBE) is important for future applications in quantum technologies, next-generatio... » read more

Overview Of Thin-Film Lithium Niobate Quantum Photonics (TU Denmark)


A new technical paper titled "Thin-film lithium niobate quantum photonics: review and perspectives" was published by researchers at the Technical University of Denmark. Abstract "Photonics has proven to be a very attractive platform for quantum technologies, offering key features such as high-fidelity qubits and room-temperature signal processing. Advancements in integrated photonics are ex... » read more

Advanced Atomistic Simulation Techniques For Atomic Layer Etching


Continuous downscaling of the critical dimensions in semiconductor devices is the cornerstone of technological revolution. As the technology nodes keep shrinking, innovations in fabrication technologies are needed to continue the trend. We have arrived at the age where atomic level precision in the fabrication of semiconductor devices is needed to keep improving PPA. Thus, advanced film fabrica... » read more

Why Thin Film Measurements Matter


Semiconductor devices are becoming thinner and more complex, making thin deposited films even harder to measure and control. With 3nm node devices in production and 2nm nodes ramping toward first-silicon, the importance of precise film measurement is only growing in significance as fabs seek to maintain the performance and reliability of leading-edge devices. Whether it’s the read and writ... » read more

Measuring Multi-Layer Ultra-Thin Critical Films


Artificial intelligence is one of the driving forces in today’s semiconductor industry, with more traditional market drivers like high performance compute and smart phones continuing to play important roles. This situation is unlikely change in the years ahead as chip makers continue their quest to create the most advanced nodes. With 3nm nodes in production and 2nm nodes on the horizon, the ... » read more

Synthesis Of An Ultrathin Vanadium Dioxide Film On A Flexible Substrate, Preserving Film’s Electrical Properties


A new technical paper titled "Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior" was published by researchers at Osaka University and National Institute for Materials Science. Abstract "We report on the preparation of vanadium dioxide (VO2) ul... » read more

Research Bits: Dec. 3


Self-assembly of mixed-metal oxide arrays Researchers from North Carolina State University and Iowa State University demonstrated a technique for self-assembling electronic devices. The proof-of-concept work was used to create diodes and transistors with high yield and could be used for more complex electronic devices. “Our self-assembling approach is significantly faster and less expensi... » read more

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