category: Materials

category: IoT, Security & Automotive

Transition-Metal Nitride Halide Dielectrics for Transition-Metal Dichalcogenide Transistors
By Technical Paper Link - 20 Dec, 2021 - Comments: 0

Abstract "Using first-principles calculations, we investigate six transition-metal nitride halides (TMNHs): HfNBr, HfNCl, TiNBr, TiNCl, ZrNBr, and ZrNCl as potential van der Waals (vdW) dielectrics for transition metal dichalcogenide (TMD) channel transistors. We calculate the exfoliation energies and bulk phonon energies and find that the six TMNHs are exfoliable and thermodynamically stabl... » read more

Motional narrowing, ballistic transport, and trapping of room-temperature exciton polaritons in an atomically-thin semiconductor
By Technical Paper Link - 10 Dec, 2021 - Comments: 0

Abstract "Monolayer transition metal dichalcogenide crystals (TMDCs) hold great promise for semiconductor optoelectronics because their bound electron-hole pairs (excitons) are stable at room temperature and interact strongly with light. When TMDCs are embedded in an optical microcavity, excitons can hybridise with cavity photons to form exciton polaritons, which inherit useful properties from... » read more

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
By Technical Paper Link - 10 Dec, 2021 - Comments: 0

Abstract "Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers—an emerging 2D semiconductor family with exceptional physical properties—exhibit stron... » read more

Solution Processable Pentafluorophenyl EndCapped Dithienothiophene Organic Semiconductors for Hole Transporting Organic Field Effect Transistors
By Technical Paper Link - 10 Dec, 2021 - Comments: 0

Abstract: "Two solution‐processable organic semiconductors, DFPT‐DTTR (1) and DFPbT‐DTTR (2), composed of pentafluorophenyl (FP) end‐capped 3,5‐dialkyl dithienothiophene (DTTR) core with thiophene (T) or bithiophene (bT) as π‐bridged spacers are developed and investigated for their optical, electrochemical, microstructural, and electrical properties. With more conjugated bithiophe... » read more

Reconstruction of Bloch wavefunctions of holes in a semiconductor
By Technical Paper Link - 07 Dec, 2021 - Comments: 0

Summary "A central goal of condensed-matter physics is to understand how the diverse electronic and optical properties of crystalline materials emerge from the wavelike motion of electrons through periodically arranged atoms. However, more than 90 years after Bloch derived the functional forms of electronic waves in crystals [1] (now known as Bloch wavefunctions), rapid scattering processes ha... » read more

The development of integrated circuits based on two-dimensional materials
By Technical Paper Link - 23 Nov, 2021 - Comments: 0

Abstract Two-dimensional (2D) materials could potentially be used to develop advanced monolithic integrated circuits. However, despite impressive demonstrations of single devices and simple circuits—in some cases with performance superior to those of silicon-based circuits—reports on the fabrication of integrated circuits using 2D materials are limited and the creation of large-scale circu... » read more

All-inorganic perovskite quantum dot light-emitting memories
By Technical Paper Link - 18 Nov, 2021 - Comments: 0

Abstract "Field-induced ionic motions in all-inorganic CsPbBr3 perovskite quantum dots (QDs) strongly dictate not only their electro-optical characteristics but also the ultimate optoelectronic device performance. Here, we show that the functionality of a single Ag/CsPbBr3/ITO device can be actively switched on a sub-millisecond scale from a resistive random-access memory (RRAM) to a light-e... » read more

Making BaZrS3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy
By Technical Paper Link - 13 Nov, 2021 - Comments: 0

Abstract: We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via tw... » read more

Quantum well interband semiconductor lasers highly tolerant to dislocations
By Technical Paper Link - 11 Nov, 2021 - Comments: 0

Abstract "III-V semiconductor lasers integrated on Si-based photonic platforms are eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip sensing. The current understanding is that only quantum dot lasers can reasonably operate at the high dislocation densities generated by the III-V-on-Si heteroepitaxy, which induces high non-radiative carrier recombination ... » read more

High-Voltage, High-Current Electrical Switching Discharge Synthesis of ZnO Nanorods: A New Method toward Rapid and Highly Tunable Synthesis of Oxide Semiconductors in Open Air and Water for Optoelectronic Applications
By Technical Paper Link - 09 Nov, 2021 - Comments: 0

Abstract: "A novel method of oxide semiconductor nanoparticle synthesis is proposed based on high-voltage, high-current electrical switching discharge (HVHC-ESD). Through a subsecond discharge in the HVHC-ESD method, we successfully synthesized zinc oxide (ZnO) nanorods. Crystallography and optical and electrical analyses approve the high crystal-quality and outstanding optoelectronic charac... » read more

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