Strategy based on a type-II band alignment to fabricate quantum well lasers highly tolerant to dislocations.
Abstract
“III-V semiconductor lasers integrated on Si-based photonic platforms are eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip sensing. The current understanding is that only quantum dot lasers can reasonably operate at the high dislocation densities generated by the III-V-on-Si heteroepitaxy, which induces high non-radiative carrier recombination rates. Here we propose a strategy based on a type-II band alignment to fabricate quantum well lasers highly tolerant to dislocations. A mid-IR GaInSb/InAs interband cascade laser grown on Si exhibits performances similar to those of its counterpart grown on the native GaSb substrate, in spite of a dislocation density in the 108cm−2 range. Over 3800 h of continuous-wave operation data have been collected, giving an extrapolated mean time to failure exceeding 312,000 h. This validates the proposed strategy and opens the way to new integrated laser development.”
Find the open access technical paper here
Laurent Cerutti, Daniel A. Díaz Thomas, Jean-Baptiste Rodriguez, Marta Rio Calvo, Gilles Patriarche, Alexei N. Baranov, and Eric Tournié, “Quantum well interband semiconductor lasers highly tolerant to dislocations,” Optica 8, 1397-1402 (2021).
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