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Crystal Phase Control during Epitaxial Hybridization of III-V Semiconductors with Silicon


Abstract: "The formation and propagation of anti-phase boundaries (APBs) in the epitaxial growth of III-V semiconductors on Silicon is still the subject of great debate, despite the impressive number of studies focusing on this topic in the last past decades. The control of the layer phase is of major importance for the future realization of photonic integrated circuits that include efficien... » read more

Quantum well interband semiconductor lasers highly tolerant to dislocations


Abstract "III-V semiconductor lasers integrated on Si-based photonic platforms are eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip sensing. The current understanding is that only quantum dot lasers can reasonably operate at the high dislocation densities generated by the III-V-on-Si heteroepitaxy, which induces high non-radiative carrier recombination ... » read more

Manufacturing Bits: Dec. 31


Bringing Graphene Down To Earth For years, the semiconductor industry has been looking at graphene as a next-generation technology for a multitude of applications. One potential application, the graphene field-effect transistor (GFET), has been developed by various companies and universities. There are several advantages and disadvantages with GFETs. On one hand, GFETs have a higher mobilit... » read more