Patterning Doping On Very Large Monolayer MoS2 (NREL)


A new technical paper titled "Spatially Precise Light-Activated Dedoping in Wafer-Scale MoS2 Films" was published by researchers at National Renewable Energy Laboratory (NREL) and Renewable & Sustainable Energy Institute (RASEI). "In this work, we unravel the mechanism that drives PL* changes of MoS2 monolayers under laser illumination in ambient conditions. We demonstrate the critical ... » read more

MIT: Stackable AI Chip With Lego-style Design


New technical paper titled "Reconfigurable heterogeneous integration using stackable chips with embedded artificial intelligence" from researchers at MIT, along with Harvard University, Tsinghua University, Zhejiang University, and others. Partial Abstract: "Here we report stackable hetero-integrated chips that use optoelectronic device arrays for chip-to-chip communication and neuromorphic... » read more

Two Chip-Scale Photonic Systems For Optical Data Transmission & Microwave Photonics


New research paper "Microcomb-driven silicon photonic systems" from Peking University, UCSB, and Peng Cheng Laboratory. Abstract "Microcombs have sparked a surge of applications over the past decade, ranging from optical communications to metrology. Despite their diverse deployment, most microcomb-based systems rely on a large amount of bulky elements and equipment to fulfil their desir... » read more

Motional narrowing, ballistic transport, and trapping of room-temperature exciton polaritons in an atomically-thin semiconductor


Abstract "Monolayer transition metal dichalcogenide crystals (TMDCs) hold great promise for semiconductor optoelectronics because their bound electron-hole pairs (excitons) are stable at room temperature and interact strongly with light. When TMDCs are embedded in an optical microcavity, excitons can hybridise with cavity photons to form exciton polaritons, which inherit useful properties from... » read more

Quantum well interband semiconductor lasers highly tolerant to dislocations


Abstract "III-V semiconductor lasers integrated on Si-based photonic platforms are eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip sensing. The current understanding is that only quantum dot lasers can reasonably operate at the high dislocation densities generated by the III-V-on-Si heteroepitaxy, which induces high non-radiative carrier recombination ... » read more

Sputtered transparent electrodes for optoelectronic devices: Induced damage and mitigation strategies


Abstract: Summary "Transparent electrodes and metal contacts deposited by magnetron sputtering find applications in numerous state-of-the-art optoelectronic devices, such as solar cells and light-emitting diodes. However, the deposition of such thin films may damage underlying sensitive device layers due to plasma emission and particle impact. Inserting a buffer layer to shield against such da... » read more

Graphene and two-dimensional materials for silicon technology


Abstract: "The development of silicon semiconductor technology has produced breakthroughs in electronics—from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones—by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device ... » read more