category: Materials

category: IoT, Security & Automotive

Recent Advances in Thermal Metamaterials and Their Future Applications for Electronics Packaging
By Technical Paper Link - 31 Mar, 2021 - Comments: 0

Abstract: "Thermal metamaterials exhibit thermal properties that do not exist in nature but can be rationally designed to offer unique capabilities of controlling heat transfer. Recent advances have demonstrated successful manipulation of conductive heat transfer and led to novel heat guiding structures such as thermal cloaks, concentrators, etc. These advances imply new opportunities to gui... » read more

Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory
By Technical Paper Link - 28 Feb, 2021 - Comments: 0

ABSTRACT "Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with spin-transfer torque devices. However, SOT memories are area intensive due to the requirement for two access transistors per bit. Here, we report a multibit SOT cell that has a single write chan... » read more

Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures
By Technical Paper Link - 31 Jan, 2020 - Comments: 0

Abstract: "The spin–orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the... » read more

A Ferroelectric Semiconductor Field-Effect Transistor
By Technical Paper Link - 31 Dec, 2019 - Comments: 0

Abstract: "Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use in non-volatile memory technology, but they suffer from short retention times, which limits their wider application. Here, we report a ferroelectric sem... » read more

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents
By Technical Paper Link - 31 Mar, 2018 - Comments: 0

ABSTRACT "An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date req... » read more

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